Dipole scattering at the interface: The origin of low mobility observed in SiC MOSFETs von Hatakeyama, Tetsuo, Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Dai, Okamoto, Mitsuo, Harada, Shinsuke

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Electrical detection of TV2a-type silicon vacancy spin defect in 4H-SiC MOSFETs von Abe, Yuta, Chaen, Akihumi, Sometani, Mitsuru, Harada, Shinsuke, Yamazaki, Yuichi, Ohshima, Takeshi, Umeda, Takahide

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Crystal-orientation-dependent flatband voltage of non-polar GaN MOS interfaces investigated using trench sidewall capacitors von Hirai, Hirohisa, Miura, Yoshinao, Nakajima, Akira, Harada, Shinsuke, Yamaguchi, Hiroshi

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Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements von Hatakeyama, Tetsuo, Kiuchi, Yuji, Sometani, Mitsuru, Harada, Shinsuke, Okamoto, Dai, Yano, Hiroshi, Yonezawa, Yoshiyuki, Okumura, Hajime

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Difference in electron mobility at 4H–SiC/SiO2 interfaces with various crystal faces originating from effective-field-dependent scattering von Hirai, Hirohisa, Hatakeyama, Tetsuo, Sometani, Mitsuru, Okamoto, Mitsuo, Harada, Shinsuke, Okumura, Hajime, Yamaguchi, Hiroshi

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Temperature-dependent analysis of conduction mechanism of leakage current in thermally grown oxide on 4H-SiC von Sometani, Mitsuru, Okamoto, Dai, Harada, Shinsuke, Ishimori, Hitoshi, Takasu, Shinji, Hatakeyama, Tetsuo, Takei, Manabu, Yonezawa, Yoshiyuki, Fukuda, Kenji, Okumura, Hajime

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Evaluation of silicon- and carbon-face SiO2/SiC MOS interface quality based on scanning nonlinear dielectric microscopy von Chinone, Norimichi, Nayak, Alpana, Kosugi, Ryoji, Tanaka, Yasunori, Harada, Shinsuke, Okumura, Hajime, Cho, Yasuo

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Ideal phonon-scattering-limited mobility in inversion channels of 4H-SiC(0001) MOSFETs with ultralow net doping concentrations von Sometani, Mitsuru, Hosoi, Takuji, Hirai, Hirohisa, Hatakeyama, Tetsuo, Harada, Shinsuke, Yano, Hiroshi, Shimura, Takayoshi, Watanabe, Heiji, Yonezawa, Yoshiyuki, Okumura, Hajime

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Prevalence of neuropathic pain in terminally ill patients with cancer admitted to a general ward: a prospective observational study von Yanaizumi, Ryota, Nagamine, Yusuke, Harada, Shinsuke, Kojima, Keiko, Tazawa, Toshiharu, Goto, Takahisa

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Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS von Baba, Masakazu, Okada, Masakazu, Kobayashi, Yusuke, Harada, Shinsuke, Kumazawa, Teruaki

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Mobility-limiting Coulomb scattering in nitrided 4H-SiC inversion channel on 11¯00 m-face and 112¯ a-face characterized by Hall effect measurements von Hirai, Hirohisa, Hatakeyama, Tetsuo, Sometani, Mitsuru, Okamoto, Mitsuo, Harada, Shinsuke, Okumura, Hajime

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Demonstration and analysis of channel mobility, trapped electron density and Hall effect at SiO2/SiC (0 3 ¯ 3 8 ¯ ) interfaces von Masuda, Takeyoshi, Hatakeyama, Tetsuo, Harada, Shinsuke, Yano, Hiroshi

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Evaluation of Basal Plane Dislocation Behavior in the Epitaxial Layer on a 4H-SiС Wafer Fabricated by the Solution Growth Method von Seki, Kazuaki, Harada, Shinsuke, Ujihara, Toru, Kusunoki, Kazuhiko

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Impact of crystal faces of 4H-SiC in SiO2/4H-SiC structures on interface trap densities and mobilities von Hatakeyama, Tetsuo, Masuda, Takeyoshi, Sometani, Mitsuru, Harada, Shinsuke, Okamoto, Dai, Yano, Hiroshi, Yonezawa, Yoshiyuki, Okumura, Hajime

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Iron loss evaluation of magnetic materials excited by a SiC inverter with a Schottky barrier diode wall-integrated trench MOSFET von Yao, Atsushi, Kato, Fumiki, Hozoji, Hiroshi, Harada, Shinsuke, Yamaguchi, Hiroshi, Sato, Hiroshi

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High-Temperature Operating Characteristics of Inverter Using SBD-Integrated MOSFET von Sato, Shinji, Yamaguchi, Hiroshi, Hozoji, Hiroshi, Sato, Hiroshi, Harada, Shinsuke, Kato, Fumiki

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Hole trapping in SiC-MOS devices evaluated by fast-capacitance-voltage method von Hayashi, Mariko, Sometani, Mitsuru, Hatakeyama, Tetsuo, Yano, Hiroshi, Harada, Shinsuke

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Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method von Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki

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Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements von Fujita, Eigo, Sometani, Mitsuru, Hatakeyama, Tetsuo, Harada, Shinsuke, Yano, Hiroshi, Hosoi, Takuji, Shimura, Takayoshi, Watanabe, Heiji

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Reduction of interface states by hydrogen treatment at the aluminum oxide/4H-SiC Si-face interface von Yoshioka, Hironori, Yamazaki, Masashi, Harada, Shinsuke

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