Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation von Kijeong Han, Baliga, B. J., Woongje Sung

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Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness von Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

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2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge von Agarwal, Aditi, Han, Kijeong, Baliga, B. Jayant

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Fabrication of CMOS-compatible optical filter arrays using gray-scale lithography von Xiao, Jing, Song, Fuchuan, Han, Kijeong, Seo, Sang-Woo

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Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results von Han, Kijeong, Baliga, B. J.

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Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET von Han, Kijeong, Baliga, B. J.

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A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results von Han, Kijeong, Baliga, B. J., Sung, Woongje

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Comparison of Four Cell Topologies for 1.2-kV Accumulation- and Inversion-Channel 4H-SiC MOSFETs: Analysis and Experimental Results von Han, Kijeong, Baliga, B. J.

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Comprehensive Physics of Third Quadrant Characteristics for Accumulation- and Inversion-Channel 1.2-kV 4H-SiC MOSFETs von Han, Kijeong, Baliga, B. J.

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Impact of Cell Topology on Characteristics of 600V 4H-SiC Planar MOSFETs von Agarwal, Aditi, Han, Kijeong, Baliga, B. Jayant

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The 1.2-kV 4H-SiC OCTFET: A New Cell Topology With Improved High-Frequency Figures-of-Merit von Han, Kijeong, Baliga, B. J.

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Comparison of 2.3-kV 4H-SiC Accumulation-Channel Planar Power MOSFETs Fabricated With Linear, Square, Hexagonal, and Octagonal Cell Topologies von Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

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600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V von Agarwal, Aditi, Han, Kijeong, Baliga, B. Jayant

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650-V 4H-SiC Planar Inversion-Channel Power JBSFETs With 55-nm Gate Oxide: Relative Performance of Three Cell Types von Agarwal, Aditi, Han, Kijeong, Baliga, B. J.

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Analysis and Experimental Quantification of 1.2-kV 4H-SiC Split-Gate Octagonal MOSFET von Han, Kijeong, Baliga, B. J.

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Operation of 1.2-kV 4H-SiC Accumulation and Inversion Channel Split-Gate (SG) MOSFETs at Elevated Temperatures von Han, Kijeong, Baliga, B. J.

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1.2-kV 4H-SiC SenseFET With Monolithically Integrated Sensing Resistor von Han, Kijeong, Baliga, B. J.

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Corrections to "600 V 4H-SiC MOSFETs Fabricated in Commercial Foundry With Reduced Gate Oxide Thickness of 27 nm to Achieve IGBT-Compatible Gate Drive of 15 V" [Nov 19 1792-1795] von Agarwal, Aditi, Han, Kijeong, Jayant Baliga, B.

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Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs von Bhattacharya, Subhashish, Baliga, B. Jayant, Kanale, Ajit, Han, Ki Jeong

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Experimental Study of Switching and Short-Circuit Performance of 1.2 kV 4H-SiC Accumulation and Inversion Channel Power MOSFETs von Kanale, Ajit, Bhattacharya, Subhashish, Agarwal, Aditi, Han, Ki Jeong, Baliga, B. Jayant

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