Prevalence of Autism Spectrum Disorder in China: A Nationwide Multi-center Population-based Study Among Children Aged 6 to 12 Years von Zhou, Hao, Xu, Xiu, Yan, Weili, Zou, Xiaobing, Wu, Lijie, Luo, Xuerong, Li, Tingyu, Huang, Yi, Guan, Hongyan, Chen, Xiang, Mao, Meng, Xia, Kun, Zhang, Lan, Li, Erzhen, Ge, Xiaoling, Zhang, Lili, Li, Chunpei, Zhang, Xudong, Zhou, Yuanfeng, Ding, Ding, Shih, Andy, Fombonne, Eric, Zheng, Yi, Han, Jisheng, Sun, Zhongsheng, Jiang, Yong-hui, Wang, Yi

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Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices von Dimitrijev, Sima, Han, Jisheng, Moghadam, Hamid Amini, Aminbeidokhti, Amirhossein

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Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs von Moghadam, Hamid Amini, Dimitrijev, Sima, Jisheng Han, Haasmann, Daniel, Aminbeidokhti, Amirhossein

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Active defects in MOS devices on 4H-SiC: A critical review von Amini Moghadam, Hamid, Dimitrijev, Sima, Han, Jisheng, Haasmann, Daniel

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The Power Law of Phonon-Limited Electron Mobility in the 2-D Electron Gas of AlGaN/GaN Heterostructure von Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Jisheng Han, Xiufang Chen, Xiangang Xu

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Transcutaneous electrical acupoint stimulation improves endometrial receptivity resulting in improved IVF-ET pregnancy outcomes in older women: a multicenter, randomized, controlle... von Feng, Xiaojun, Zhu, Na, Yang, Shuo, Wang, Li, Sun, Wei, Li, Rong, Gong, Fei, Han, Songping, Zhang, Rong, Han, Jisheng

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Experimental Investigation of Piezoresistive Effect in p-Type 4H-SiC von Tuan-Khoa Nguyen, Hoang-Phuong Phan, Toan Dinh, Jisheng Han, Dimitrijev, Sima, Tanner, Philip, Foisal, Abu Riduan Md, Yong Zhu, Nam-Trung Nguyen, Dzung Viet Dao

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Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C von Wang, Li, Dimitrijev, Sima, Han, Jisheng, Iacopi, Alan, Hold, Leonie, Tanner, Philip, Harrison, H. Barry

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Oxytocin and arginine vasopressin: a bridge between acupuncture and autism spectrum disorder von Zhang, Rong, Han, Jisheng, Han, Songping

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Transcutaneous Electrical Acupoint Stimulation in Early Life Changes Synaptic Plasticity and Improves Symptoms in a Valproic Acid-Induced Rat Model of Autism von Zhang, Rong, Han, Songping, Zhang, Chen, Wang, Juan, Song, Yayue, Ding, Rui, Wang, Xiaoxi, Han, Jisheng

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Gate-Voltage Independence of Electron Mobility in Power AlGaN/GaN HEMTs von Aminbeidokhti, Amirhossein, Dimitrijev, Sima, Kumar Hanumanthappa, Anil, Amini Moghadam, Hamid, Haasmann, Daniel, Jisheng Han, Yan Shen, Xiangang Xu

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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors von Tang, Xi, Li, Baikui, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng, Dimitrijev, Sima

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Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Post Bis(trifluoromethane) Sulfonamide Treatment von Chen, Siheng, Cui, Peng, Xu, Mingsheng, Lin, Zhaojun, Xu, Xiangang, Zeng, Yuping, Han, Jisheng

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Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review von Li, Guo, Xu, Mingsheng, Zou, Dongyang, Cui, Yingxin, Zhong, Yu, Cui, Peng, Cheong, Kuan Yew, Xia, Jinbao, Nie, Hongkun, Li, Shuqiang, Linewih, Handoko, Zhang, Baitao, Xu, Xiangang, Han, Jisheng

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Manipulation of and sustained effects on the human brain induced by different modalities of acupuncture: an fMRI study von Jiang, Yin, Wang, Hong, Liu, Zhenyu, Dong, Yuru, Dong, Yue, Xiang, Xiaohui, Bai, Lijun, Tian, Jie, Wu, Liuzhen, Han, Jisheng, Cui, Cailian

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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode von Wang, Xinyu, Li, Ming, Zeng, Fanpeng, Zhang, Bin, Ge, Lei, Cui, Yingxin, Xu, Mingsheng, Zhong, Yu, Yew Cheong, Kuan, Hu, Xiaobo, Xu, Xiangang, Han, Jisheng

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Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias von Tang, Xi, Li, Baikui, Moghadam, Hamid Amini, Tanner, Philip, Han, Jisheng, Li, Hui, Dimitrijev, Sima, Wang, Jiannong

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Thickness dependence of the piezoresistive effect in p-type single crystalline 3C-SiC nanothin films von Phan, Hoang-Phuong, Dao, Dzung Viet, Tanner, Philip, Han, Jisheng, Nguyen, Nam-Trung, Dimitrijev, Sima, Walker, Glenn, Wang, Li, Zhu, Yong

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The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors von Moghadam, Hamid Amini, Dimitrijev, Sima, Jisheng Han, Haasmann, Daniel

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Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs von Li, Baikui, Tang, Xi, Li, Hui, Moghadam, Hamid Amini, Zhang, Zhaofu, Han, Jisheng, Nguyen, Nam-Trung, Dimitrijev, Sima, Wang, Jiannong

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