Monolithic InP 100-Channel [Formula Omitted] 10-GHz Device for Optical Arbitrary Waveform Generation von Soares, Francisco M, Fontaine, Nicolas K, Scott, Ryan P, Baek, J. H, Zhou, X, Su, T, Cheung, S, Wang, Y, Junesand, C, Lourdudoss, S, Liou, K. Y, Hamm, R. A, Wang, W, Patel, B, Gruezke, L. A, Tsang, W. T, Heritage, Jonathan P, Yoo, S. J. B

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Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit von Spiegel, S.J., Ritter, D., Hamm, R.A., Feygenson, A., Smith, P.R.

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High-speed monolithic p-i-n/HBT and HPT/HBT photoreceivers implemented with simple phototransistor structure von Chandrasekhar, S., Lunardi, L.M., Gnauck, A.H., Hamm, R.A., Qua, G.J.

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Subpicosecond InP/InGaAs heterostructure bipolar transistors von Chen, Y.-K., Nottenburg, R.N., Panish, M.B., Hamm, R.A., Humphrey, D.A.

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Kinetic surface roughening in molecular beam epitaxy of InP von COTTA, M. A, HAMM, R. A, STALEY, T. W, CHU, S. N. G, HARRIOTT, L. R, PANISH, M. B, TEMKIN, H

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LATTICE-MATCHED INGAASP/INP LONG-WAVELENGTH QUANTUM-WELL INFRARED PHOTODETECTORS von GUNAPALA, SD, LEVINE, BF, RITTER, D, HAMM, RA, PANISH, MB

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Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability von KOPF, R. F, HAMM, R. A, RYAN, R. W, BURM, J, TATE, A, CHEN, Y.-K, GEORGIOU, G, LANG, D. V, REN, F

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Optical characterization of carbon-doped Ga0.47In0.53As von GERLING, M, HAMM, R. A

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Implant-induced high-resistivity regions in InP and InGaAs von PEARTON, S. J, ABERNATHY, C. R, PANISH, M. B, HAMM, R. A, LUNARDI, L. M

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A 12-Gb/s high-performance, high-sensitivity monolithic p-i-n/HBT photoreceiver module for long-wavelength transmission systems von Lunardi, L.M., Chandrasekhar, S., Gnauck, A.H., Burrus, C.A., Hamm, R.A., Sulhoff, J.W., Zyskind, J.L.

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ANOMALOUS ELECTRIC-FIELD AND TEMPERATURE-DEPENDENCE OF COLLECTOR MULTIPLICATION IN INP/GA0.47IN0.53AS HETEROJUNCTION BIPOLAR-TRANSISTORS von RITTER, D, HAMM, RA, FEYGENSON, A, PANISH, MB

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Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications von KOPF, R. F, HAMM, R. A, WANG, Y.-C, RYAN, R. W, TATE, A, MELENDES, M. A, PULLELA, R, CHEN, Y.-K, THEVIN, J

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BISTABLE HOT-ELECTRON TRANSPORT IN INP/GAINAS COMPOSITE COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTORS von RITTER, D, HAMM, RA, FEYGENSON, A, TEMKIN, H, PANISH, MB, CHANDRASEKHAR, S

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Critical layer thickness in strained Ga1-xInxAs/InP quantum wells von TEMKIN, H, GERSHONI, D. G, CHU, S. N. G, VANDENBERG, J. M, HAMM, R. A, PANISH, M. E

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High-resolution x-ray diffraction studies of InGaAs(P)/InP superlattices grown by gas-source molecular-beam epitaxy von VANDERBERG, J. M, HAMM, R. A, PANISH, M. B, TEMKIN, H

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Measurement of the electron ionization coefficient at low electric fields in InGaAs-based heterojunction bipolar transistors von Canali, C., Forzan, C., Neviani, A., Vendrame, L., Zanoni, E., Hamm, R. A., Malik, R. J., Capasso, F., Chandrasekhar, S.

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Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction von KOPF, R. F, HAMM, R. A, RYAN, R. W, TATE, A, BURM, J

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Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors von Kirtania, A.K., Das, M.B., Chandrasekhar, S., Lunardi, L.M., Qua, G.J., Hamm, R.A., Li-Wu Yang

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Optical properties of very thin GaInAs(P)/InP quantum wells grown by gas source molecular beam epitaxy von PANISH, M. B, TEMKIN, H, HAMM, R. A, CHU, S. N. G

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Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's von Chor, E.F., Malik, R.J., Hamm, R.A., Ryan, R.

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