High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects von Hallin, Christer, Bergman, Peder, Lendenmann, H., Dahlquist, Fanny, Bleichner, H.

Volltext

Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC von Hallin, Christer, Bergman, Peder, Lendenmann, H., Dahlquist, Fanny

Volltext

Electrical Activity of Residual Boron in Silicon Carbide von Hallin, Christer, Bergman, Peder, Janzén, Erik, Storasta, L.

Volltext

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDUCTOR STRUCTURES von HALLIN, Christer

Volltext bestellen

METHODS OF FORMING SEMICONDUCTOR STRUCTURES AND RESULTING SEMICONDUCTOR STRUCTURES von Hallin, Christer

Volltext bestellen

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes von Jacobson, H., Bergman, J. P., Hallin, C., Janzén, E., Tuomi, T., Lendenmann, H.

Volltext

Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices von Skowronski, Marek, Paisley, Michael J., Carter Jr, Calvin H., Bergman, Peder, Hull, Brett A., Das, Mrinal K., Ha, Seo Young, Sumakeris, Joseph J., Hallin, Christer, Lendenmann, H., Janzén, Erik, Palmour, John W., O'Loughlin, Michael J.

Volltext

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes von Ellison, Alexsandre, Henry, Anne, Wahab, Qamar-ul, Hallin, Christer, Di Persio, J., Janzén, Erik, Martinez, R.

Volltext

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes von Wahab, Q., Ellison, A., Henry, A., Janzén, E., Hallin, C., Di Persio, J., Martinez, R.

Volltext

Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC von Zolnai, Z., Son, N. T., Hallin, C., Janzén, E.

Volltext

Evaluation of Auger Recombination Rate in 4H-SiC von Lindefelt, Ulf, Hallin, Christer, Linnros, Jan, Grivickas, Vytautas, Galeckas, Augustinas

Volltext

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques von Henry, A., ul Hassan, J., Bergman, J. P., Hallin, C., Janzén, E.

Volltext

MIX DOPING OF A SEMI-INSULATING GROUP III NITRIDE von HALLIN, Christer, SRIRAM, Saptharishi

Volltext bestellen

MIX DOPING OF A SEMI-INSULATING GROUP III NITRIDE von HALLIN, Christer, SRIRAM, Saptharishi

Volltext bestellen

Doping-induced strain in N-doped 4H–SiC crystals von Jacobson, H., Birch, J., Hallin, C., Henry, A., Yakimova, R., Tuomi, T., Janzén, E., Lindefelt, U.

Volltext

HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPATION von KUHR, Thomas, HALLIN, Christer, KING, Matt

Volltext bestellen

HETEROEPITAXIAL SEMICONDUCTOR DEVICES WITH ENHANCED THERMAL DISSIPATION von Kuhr, Thomas, Hallin, Christer, King, Matt

Volltext bestellen

SEMICONDUCTOR STRUCTURE FOR IMPROVED RADIO FREQUENCY THERMAL MANAGEMENT von HALLIN, Christer, SHEPPARD, Scott, KING, Matthew R

Volltext bestellen

Semiconductor Structure for Improved Radio Frequency Thermal Management von Sheppard, Scott, Hallin, Christer, King, Matthew R

Volltext bestellen

SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR STRUCTURE WITH POLARITY INVERTING LAYER von HALLIN, Christer, BOTHE, Kyle, KING, Matthew R

Volltext bestellen