Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures von Ayedh, H. M., Nipoti, R., Hallén, A., Svensson, B. G.

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Formation of carbon vacancy in 4H silicon carbide during high-temperature processing von Ayedh, H. M., Bobal, V., Nipoti, R., Hallén, A., Svensson, B. G.

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Carbon vacancy control in p+-n silicon carbide diodes for high voltage bipolar applications von Ayedh, H M, Kvamsdal, K-E, Bobal, V, Hallén, A, Ling, F C C, Kuznetsov, A Yu

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New beam line for time-of-flight medium energy ion scattering with large area position sensitive detector von Linnarsson, M K, Hallén, A, Åström, J, Primetzhofer, D, Legendre, S, Possnert, G

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Helium bubble distributions in a nanostructured ferritic alloy von Edmondson, P.D., Parish, C.M., Zhang, Y., Hallén, A., Miller, M.K.

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Effect of implanted species on thermal evolution of ion-induced defects in ZnO von Azarov, A. Yu, Hallén, A., Du, X. L., Rauwel, P., Kuznetsov, A. Yu, Svensson, B. G.

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Interface between Al2O3 and 4H-SiC investigated by time-of-flight medium energy ion scattering von Linnarsson, M K, Hallén, A, Khartsev, S, Suvanam, S S, Usman, M

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Helium entrapment in a nanostructured ferritic alloy von Edmondson, P.D., Parish, C.M., Zhang, Y., Hallén, A., Miller, M.K.

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High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors von Majdi, S., Gabrysch, M., Suntornwipat, N., Burmeister, F., Jonsson, R., Kovi, K. K., Hallén, A.

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4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption von Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A.

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Impact of helium implantation and ion-induced damage on reflectivity of molybdenum mirrors von Garcia-Carrasco, A., Petersson, P., Hallén, A., Grzonka, J., Gilbert, M.R., Fortuna-Zalesna, E., Rubel, M.

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Annealing of ion implanted CdZnO von Azarov, A Yu, Hallén, A, Svensson, B G, Kuznetsov, A Yu

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Growth of GeSnSiC layers for photonic applications von Jamshidi, A., Noroozi, M., Moeen, M., Hallén, A., Hamawandi, B., Lu, J., Hultman, L., Östling, M., Radamson, H.

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Ge(Sn) growth on Si(001) by magnetron sputtering von Khelidj, H., Portavoce, A., Bertoglio, M., Descoins, M., Patout, L., Hoummada, K., Hallén, A., Charaï, A., Benoudia, M.C., Mangelinck, D.

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Time-resolved luminescence studies of proton-implanted GaN von Pinos, A., Marcinkevičius, S., Usman, M., Hallén, A.

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Influence from the electronic shell structure on the range distribution during channeling of 40–300 keV ions in 4H-SiC von Linnarsson, M. K., Vines, L., Hallén, A.

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Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species von Ayedh, H. M., Hallén, A., Svensson, B. G.

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Formation of D-center in p-type 4H-SiC epi-layers during high temperature treatments von Ayedh, H. M., Iwamoto, N., Nipoti, R., Hallén, A., Svensson, B. G.

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Improvements in Realizing 4H-SiC Thermal Neutron Detectors von Issa, F., Vervisch, V., Ottaviani, L., Szalkai, D., Vermeeren, L., Lyoussi, A., Kuznetsov, A., Lazar, M., Klix, A., Palais, O., Hallén, A.

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Origin of the anomalous temperature dependence of coercivity in soft ferromagnets von Moubah, R., Ahlberg, M., Zamani, A., Olsson, A., Shi, S., Sun, Z., Carlson, S., Hallén, A., Hjörvarsson, B., Jönsson, P. E.

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