Titanium disilicide contact resistivity and its impact on 1-μm CMOS circuit performance von SCOTT, D. B, CHAPMAN, R. A, CHE-CHIA WEI, MAHANT-SHETTI, S. S, HAKEN, R. A, HOLLOWAY, T. C

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Titanium nitride local interconnect technology for VLSI von Tang, T.E., Che-Chia Wei, Haken, R.A., Holloway, T.C., Hite, L.R., Blake, T.G.W.

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An 8-ns 256K ECL SRAM with CMOS memory array and battery backup capability von Tran, H.V., Scott, D.B., Fung, P.K., Havemann, R.H., Eklund, R.H., Ham, T.E., Haken, R.A., Shah, A.H.

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Development of the self-aligned titanium silicide process for VLSI applications von Alperin, M.E., Holloway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V., Parmantie, W.D.

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Development of the Self-Aligned Titanium Silicide Process for VLSI Applications von Alperin, M.E., Hollaway, T.C., Haken, R.A., Gosmeyer, C.D., Karnaugh, R.V., Parmantie, W.D.

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An electronically programmable transversal input filter von Haken, R.A.

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Analysis of the deep depletion MOSFET and the use of the d.c. characteristics for determining bulk-channel charge-coupled device parameters von Haken, Roger A.

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Supply charge isolation-A simple surface potential equilibration charge-injection technique for charge-coupled devices von Haken, R.A.

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An investigation into the dependence of the chemically-etched edge profiles of silicon dioxide films on etchant concentration and temperature von Haken, R.A., Baker, I.M., Beynon, J.D.E.

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Self-Aligned Gaps—An Alternative Technique for Closely Spaced Metallization Patterns von Beynon, J. D. E., Haken, R. A., Baker, I. M.

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Supply charge isolation - A simple surface potential equilibrium charge-injection technique for charge-coupled devices von Haken, R A

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IIIB-7 a new local interconnect technique for VLSI submicrometer CMOS applications von Tang, T.E., Che-Chia Wei, Haken, R.A.

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Binary/Analog CCD Correlator Development von Haken,R A

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IIIB-8 titanium disilicide contact resistivity and its impact on 1-µm CMOS circuit performance von Scott, D.B., Chapman, R.A., Wei, C.C., Mahant-Shetti, S., Haken, R.A., Holloway, T.C.

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IIIB-8 titanium disilicide contact resistivity and its impact on 1-mum CMOS circuit performance von Scott, D B, Chapman, R A, Wei, C C, Mahant-Shetti, S, Haken, R A, Holloway, T C

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IIB-6 a fast write low voltage non-volatile RAM von Haken, R.A., Feger, W.E., Coleman, D.J.

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Investigation Into the Dependence of the ChemicallyEtched Edge Profiles of Si02 Films on Etchant Concentration and Temperature von Haken, R A, Baker, I M, Beynon, J D E

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VB-1 a VLSI suitable 2-µm stacked CMOS process von Malhi, S.D.S., Karnaugh, R., Shah, A.H., Hite, L., Chatterjee, P.K., Davis, H.E., Mahant-Shetti, S.S., Gosmeyer, C.D., Sundaresan, R.S., Chen, C.E., Lam, H.W., Haken, R.A., Pinizzotto, R.F., Hester, R.K.

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Binary/Analog CCD Correlator Development von Haken ,R A, Pettengill,R C

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A comparison of static bulk-channel charge-coupled device characteristics using uniform, Gaussian and measured impurity distributions von Haken, Roger A.

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