IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels von Yokogawa, Sozo, Oshiyama, Itaru, Ikeda, Harumi, Ebiko, Yoshiki, Hirano, Tomoyuki, Saito, Suguru, Oinoue, Takashi, Hagimoto, Yoshiya, Iwamoto, Hayato

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Structural and electrical characteristics of ion-induced Si damage during atomic layer etching von Hirata, Akiko, Fukasawa, Masanaga, Kugimiya, Katsuhisa, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Hagimoto, Yoshiya, Iwamoto, Hayato

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High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar Unico, Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Effect of Post-Etch Wet Cleaning on GaAs Surfaces von Hirano, Tomoki, Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya

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Modeling and simulation of coverage and film properties in deposition process on large-scale pattern using statistical ensemble method von Kuboi, Nobuyuki, Matsugai, Hiroyasu, Tatsumi, Tetsuya, Kobayashi, Shoji, Hagimoto, Yoshiya, Iwamoto, Hayato

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Five-step plasma-enhanced atomic layer etching of silicon nitride with a stable etched amount per cycle von Hirata, Akiko, Fukasawa, Masanaga, Tercero, Jomar U., Kugimiya, Katsuhisa, Hagimoto, Yoshiya, Karahashi, Kazuhiro, Hamaguchi, Satoshi, Iwamoto, Hayato

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Evaluation of the Plasmaless Gaseous Etching Process von Orii, Takehiko, Hagimoto, Yoshiya, Muraki, Yusuke, Iwamoto, Hayato, Ugajin, Hajime, Miyakoshi, Daisuke

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(Invited) Bonding Strength of Cu-Cu Hybrid Bonding for 3D Integration Process von Fujii, Nobutoshi, Furuse, Shunsuke, Yoshioka, Hirotaka, Ogawa, Naoki, Yamada, Taichi, Hirano, Takaaki, Saito, Suguru, Hagimoto, Yoshiya, Iwamoto, Hayato

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Characterization of Wet Chemical Atomic Layer Etching of InGaAs von Hirano, Tomoki, Fukatani, Takashi, Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya

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Analysis of Surface Reaction for Group III-V Compound Semiconductors in Functional Water von Nishio, Kenya, Hagimoto, Yoshiya, Oinoue, Takashi, Saito, Suguru, Ida, Junichi, Iwamoto, Hayato, Ogawa, Yuichi

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Effect of WET treatment on Group III-V Compound Semiconductor Surface von Saito, Suguru, Iwamoto, Hayato, Nishio, Kenya, Hagimoto, Yoshiya

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Behavior Analysis of Si Etching Process with HF/HNO3 Mixture in Single-Spin Wafer Process von Saito, Suguru, Iwamoto, Hayato, Hagimoto, Yoshiya, Oinoue, Takashi, Okuyama, Atsushi

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Analysis of Si Wet Etching Effect on Wafer Edge von Saito, Suguru, Hagimoto, Yoshiya, Iwamoto, Hayato, Okuyama, Atsushi, Takeo, Kenji

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Evaluation of Hafnium Contamination on Wafer Surfaces after the Wet Cleaning Process von Saito, Suguru, Hagimoto, Yoshiya, Iwamoto, Hayato

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Semiconductor device with a through electrode reception part wider than a through electrode, solid-state imaging device, and electronic equipment von Hagimoto, Yoshiya

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Semiconductor device including a structure for higher integration von Hagimoto, Yoshiya, Fujii, Nobutoshi

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SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT von HAGIMOTO, YOSHIYA

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Impact of Electrostatic Effects on Wet Etching Phenomenon in Nanoscale Region von Saito, Suguru, Iwamoto, Hayato, Okuyama, Atsushi, Toshima, Takayuki, Suzuki, Ayuta, Nishi, Kenji, Hagimoto, Yoshiya

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SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING DEVICE, AND ELECTRONIC EQUIPMENT von HAGIMOTO, YOSHIYA

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Influence of Ammonia Gas Ambient in IPA Drying Process of the Single Wafer Cleaning System von Hagimoto, Yoshiya, Iwamoto, Hayato, Kawabuchi, Yosuke, Minami, Teruomi

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