True green semipolar InGaN-based laser diodes beyond critical thickness limits using limited area epitaxy von Hardy, Matthew T., Wu, Feng, Shan Hsu, Po, Haeger, Daniel A., Nakamura, Shuji, Speck, James S., DenBaars, Steven P.

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InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates von Hsu, Po Shan, Kelchner, Kathryn M, Tyagi, Anurag, Farrell, Robert M, Haeger, Daniel A, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Speck, James S, Nakamura, Shuji

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AlGaN-Cladding-Free $m$-Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers von Farrell, Robert M, Haeger, Daniel A, Hsu, Po Shan, Hardy, Matthew T, Kelchner, Kathryn M, Fujito, Kenji, Feezell, Daniel F, Mishra, Umesh K, DenBaars, Steven P, Speck, James S, Nakamura, Shuji

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AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm von Tyagi, Anurag, Farrell, Robert M, Kelchner, Kathryn M, Huang, Chia-Yen, Hsu, Po Shan, Haeger, Daniel A, Hardy, Matthew T, Holder, Casey, Fujito, Kenji, Cohen, Daniel A, Ohta, Hiroaki, Speck, James S, DenBaars, Steven P, Nakamura, Shuji

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Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission von Young, Erin C., Wu, Feng, Romanov, Alexey E., Haeger, Daniel A., Nakamura, Shuji, Denbaars, Steven P., Cohen, Daniel A., Speck, James S.

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Suppression of m -plane and c -plane slip through Si and Mg doping in partially relaxed (202¯1) InGaN/GaN heterostructures von Hardy, Matthew T., Young, Erin C., Shan Hsu, Po, Haeger, Daniel A., Koslow, Ingrid L., Nakamura, Shuji, DenBaars, Steven P., Speck, James S.

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Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes von Farrell, Robert M., Feezell, Daniel F., Schmidt, Mathew C., Haeger, Daniel A., Kelchner, Kathryn M., Iso, Kenji, Yamada, Hisashi, Saito, Makoto, Fujito, Kenji, Cohen, Daniel A., Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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Blue InGaN/GaN laser diodes grown on (33$ bar 3 bar 1 $) free-standing GaN substrates von Hsu, Po Shan, Sonoda, Junichi, Kelchner, Kathryn M., Tyagi, Anurag, Farrell, Robert M., Haeger, Daniel A., Young, Erin C., Romanov, Alexey E., Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P., Speck, James S., Nakamura, Shuji

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384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer von Haeger, Daniel A., Young, Erin C., Chung, Roy B., Wu, Feng, Pfaff, Nathan A., Tsai, Min, Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji, Cohen, Daniel A.

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Blue-Green InGaN/GaN Laser Diodes on Miscut m -Plane GaN Substrate von Lin, You-Da, Hardy, Matthew T., Hsu, Po Shan, Kelchner, Kathryn M., Huang, Chia-Yen, Haeger, Daniel A., Farrell, Robert M., Fujito, Kenji, Chakraborty, Arpan, Ohta, Hiroaki, Speck, James S., DenBaars, Steven P., Nakamura, Shuji

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384nm laser diode grown on a ( 20 2 ¯ 1 ) semipolar relaxed AlGaN buffer layer von Haeger, Daniel A., Young, Erin C., Chung, Roy B., Wu, Feng, Pfaff, Nathan A., Tsai, Min, Fujito, Kenji, DenBaars, Steven P., Speck, James S., Nakamura, Shuji, Cohen, Daniel A.

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Nonpolar AlGaN-Cladding-Free Blue Laser Diodes with InGaN Waveguiding von Kelchner, Kathryn M., Lin, You-Da, Hardy, Matthew T., Huang, Chia Yen, Hsu, Po Shan, Farrell, Robert M., Haeger, Daniel A., Kuo, Hsun Chih, Wu, Feng, Fujito, Kenji, Cohen, Daniel A., Chakraborty, Arpan, Ohta, Hiroaki, Speck, James S., Nakamura, Shuji, DenBaars, Steven P.

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Carrier dynamics in active regions for ultraviolet optoelectronics grown on thick, relaxed AlGaN on semipolar bulk GaN von Garrett, Gregory A., Rotella, Paul, Shen, Hongen, Wraback, Michael, Haeger, Daniel A., Chung, Roy B., Pfaff, Nathan, Young, Erin C., DenBaars, Steven P., Speck, James S., Cohen, Daniel A.

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Semipolar AlN on bulk GaN for UV-C diode lasers von Chung, Roy B., Young, Erin C., Haeger, Daniel A., DenBaars, Steven P., Speck, James S., Cohen, Daniel A.

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Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes von Haeger, D. A., Holder, C., Farrell, R. M., Po Shan Hsu, Kelchner, K. M., Fujito, K., Cohen, D. A., DenBaars, S. P., Speck, J. S., Nakamura, S.

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LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION von XIN, Xiaobin, SIZOV, Dimitry S, HAEGER, Daniel A, BOUR, David P

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LED LED SIDEWALL PROCESSING TO MITIGATE NON-RADIATIVE RECOMBINATION von XIN XIAOBIN, SIZOV DMITRY S, HAEGER DANIEL A, BOUR DAVID P

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Semi-polar III-nitride optoelectronic devices on m-plane substrates with miscuts less than +/− 15 degrees in the c-direction von Speck, James S, DenBaars, Steven P, Tyagi, Anurag, Farrell, Robert M, Ohta, Hiroaki, Hsu, Po Shan, Nakamura, Shuji, Kelchner, Kathryn M, Haeger, Daniel A

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비방사 재결합을 완화하기 위한 LED 측벽 프로세싱 von XIN XIAOBIN, SIZOV DMITRY S, HAEGER DANIEL A, BOUR DAVID P

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LED sidewall processing to mitigate non-radiative recombination von Bour, David P, Sizov, Dmitry S, Haeger, Daniel A, Xin, Xiaobin

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