Recent advances in the performance of InP Gunn devices and GaAs TUNNETT diodes for the 100-300-GHz frequency range and above von Eisele, H., Rydberg, A., Haddad, G.I.

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Microwave solid-state active devices von Haddad, G.I., Trew, R.J.

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Resonant tunneling diodes: models and properties von Jian Ping Sun, Haddad, G.I., Mazumder, P., Schulman, J.N.

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Differential tunnel transparency of a rectangular heterostructural barrier for the terahertz frequency range von Gribnikov, Z. S., Haddad, G. I.

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Split donor centers and split excitons in a semiconductor heterostructure von Gribnikov, Z. S., Haddad, G. I.

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Quantum wires and dots induced in a semiconductor by charged metallic filaments separated by an isolating barrier von Gribnikov, Z. S., Haddad, G. I.

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Transfer matrix method for interface optical-phonon modes in multiple-interface heterostructure systems von Yu, SeGi, Kim, K. W., Stroscio, Michael A., Iafrate, G. J., Sun, J.-P., Haddad, G. I.

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Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance von Gribnikov, Z. S., Vagidov, N. Z., Mitin, V. V., Haddad, G. I.

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Numerical modeling of abrupt heterojunctions using a thermionic-field emission boundary condition von Yang, Kyounghoon, East, Jack R., Haddad, George I.

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Phenomenological theory of tunnel emitter transit time oscillators for the terahertz range von Gribnikov, Z. S., Vagidov, N. Z., Haddad, G. I.

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Compact multiple-valued multiplexers using negative differential resistance devices von Chan, H.L., Mohan, S., Mazumder, P., Haddad, G.I.

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Small Metallic Contacts in the System Metal/ Barrier/ Semiconductor as the Single-Electron Qubits von Gribnikov, Zinovi S, Haddad, George I

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Theory of unipolar ballistic and quasiballistic transit-time oscillators for a terahertz range von Gribnikov, Z.S, Vagidov, N.Z, Mitin, V.V, Haddad, G.I

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GaAs TUNNETT diodes on diamond heat sinks for 100 GHz and above von Eisele, H., Haddad, G.I.

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Theoretical and experimental DC characterization of InGaAs-based abrupt emitter HBT's von Kyounghoon Yang, Cowles, J.C., East, J.R., Haddad, G.I.

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Device and circuit simulation of quantum electronic devices von Mohan, S., Sun, J.P., Mazumder, P., Haddad, G.I.

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Electron dispersion relations with negative effective masses in quantum wells grown on the cleaved edge of a superlattice von Gribnikov, Z.S., Bashirov, R.R., Eisele, H., Mitin, V.V., Haddad, G.I.

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Numerical study on the injection performance of AlGaAs/GaAs abrupt emitter heterojunction bipolar transistors von Kyounghoon Yang, East, J.R., Haddad, G.I.

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D-band (110–170 GHz) InP gunn devices von Kamoua, R., Eisele, H., Haddad, G.I.

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Wigner function modeling of resonant tunneling diodes with high peak-to-valley ratios von MAINS, R. K, HADDAD, G. I

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