New Photoresist Based on Amorphous Low Molecular Weight Polyphenols von Hirayama, Taku, Daiju, Shiono, Hada, Hideo, Onodera, Junichi, Ueda, Mitsuru

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Spectral analysis of line-edge roughness in polyphenol EB-resists and its impact on transistor performance von Yamaguchi, Atsuko, Fukuda, Hiroshi, Arai, Tadashi, Yamamoto, Jiro, Hirayama, Taku, Shiono, Daiju, Hada, Hideo, Onodera, Junichi

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Studies of the Photo Acid Generator Material Design for Chemically Amplified Photoresists von Utsumi, Yoshiyuki, Seshimo, Takehiro, Komuro, Yoshitaka, Kawaue, Akiya, Ishiduka, Keita, Matsuzawa, Kensuke, Hada, Hideo, Onodera, Junichi

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Depth Profile and Line-Edge Roughness of Low-Molecular-Weight Amorphous Electron Beam Resists von Hirayama, Taku, Shiono, Daiju, Matsumaru, Shogo, Ogata, Toshiyuki, Hada, Hideo, Onodera, Junichi, Arai, Tadashi, Sakamizu, Toshio, Yamaguchi, Atsuko, Shiraishi, Hiroshi, Fukuda, Hiroshi, Ueda, Mitsuru

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Fundamental Studies on the Acid Generator to Improve the Resolution, Line Width Roughness, and Sensitivity Tradeoff under Ionizing Radiation von Utsumi, Yoshiyuki, Irie, Makiko, Komuro, Yoshitaka, Matsuzawa, Kensuke, Hada, Hideo, Haga, Takashi, Ogawa, Satoshi

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Decomposition and Roughness Analysis of Chemically Amplified Molecular Resist for Reducing Line Width Roughness von Shiono, Daiju, Hada, Hideo, Sato, Kazufumi, Fukushima, Yasuyuki, Watanabe, Takeo, Kinoshita, Hiroo

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Performance of molecular resist based on polyphenol in EUV lithography von Oizumi, Hiroaki, Kumasaka, Fumiaki, Tanaka, Yuusuke, Hirayama, Taku, Shiono, Daiju, Hada, Hideo, Onodera, Junichi, Yamaguchi, Atsuko, Nishiyama, Iwao

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LER evaluation of molecular resist for EUV lithography von Shiono, Daiju, Hada, Hideo, Yukawa, Hiroto, Oizumi, Hiroaki, Nishiyama, Iwao, Kojima, Kyoko, Fukuda, Hiroshi

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Fundamental Decomposition Analysis of Chemically Amplified Molecular Resist for below 22 nm Resolution von Shiono, Daiju, Hada, Hideo, Sato, Kazufumi, Fukushima, Yasuyuki, Watanabe, Takeo, Kinoshita, Hiroo

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Decomposition Analysis of Chemically Amplified Resists for Improving Critical Dimension Control von Shiono, Daiju, Hada, Hideo, Hirayama, Taku, Onodera, Junichi, Watanabe, Takeo, Kinoshita, Hiroo

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Lithographic Evaluation of Chemically Amplified Molecular Resist for below 22nm Resolution von Shiono, Daiju, Hada, Hideo, Sato, Kazufumi, Fukushima, Yasuyuki, Watanabe, Takeo, Kinoshita, Hiroo

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Patterning capability of new molecular resist in EUV lithography von Oizumi, Hiroaki, Tanaka, Yuusuke, Kumise, Takaaki, Shiono, Daiju, Hirayama, Taku, Hada, Hideo, Onodera, Junichi, Yamaguchi, Atsuko, Nishiyama, Iwao

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Evaluation of New Molecular Resist for EUV Lithography von Oizumi, Hiroaki, Tanaka, Yuusuke, Kumise, Takaaki, Shiono, Daiju, Hirayama, Taku, Hada, Hideo, Onodera, Junichi, Yamaguchi, Atusko, Nishiyama, Iwao

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Development of Fast-Photospeed Chemically Amplified Resist in Extreme Ultraviolet Lithography von Watanabe, Takeo, Hada, Hideo, Lee, Seung Yoon, Kinoshita, Hiroo, Hamamoto, Kazuhiro, Komano, Hiroshi

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Fundamental Decomposition Analysis of Chemically Amplified Molecular Resist for below 22nm Resolution von Shiono, Daiju, Hada, Hideo, Sato, Kazufumi, Fukushima, Yasuyuki, Watanabe, Takeo, Kinoshita, Hiroo

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Outgassing Characteristics of Low-Molecular-Weight Resists for Extreme Ultraviolet Lithography von Hada, Hideo, Hirayama, Taku, Shiono, Daiju, Onodera, Junichi, Watanabe, Takeo, Lee, Seung Yoon, Kinoshita, Hiroo

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Characterization of Negative-Tone Molecular Resist for EUV and EB Lithography von Kojima, Kyoko, Mori, Shigeki, Shiono, Daiju, Hada, Hideo, Onodera, Junichi

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Outgassing Analysis in EUV Resist von Hada, Hideo, Watanabe, Takeo, Kinoshita, Hiroo, Komano, Hiroji

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Negative-Tone Polyphenol Resist using Intramolecular-Esterification Reaction for sub-50 nm Lithography von Kojima, Kyoko, Hattori, Takashi, Fukuda, Hiroshi, Hirayama, Taku, Shiono, Daiji, Hada, Hideo, Onodera, Junichi

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Characteristics of CA Resist in EUV Lithography von Hamamoto, Kazuhiro, Watanabe, Takeo, Hada, Hideo, Komano, Hiroshi, Kinoshita, Hiroo

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