Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate von Hoffmann, V., Knauer, A., Brunner, C., Einfeldt, S., Weyers, M., Tränkle, G., Haberland, K., Zettler, J.-T., Kneissl, M.

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Anisotropic bow and plastic deformation of GaN on silicon von Dadgar, A., Fritze, S., Schulz, O., Hennig, J., Bläsing, J., Witte, H., Diez, A., Heinle, U., Kunze, M., Daumiller, I., Haberland, K., Krost, A.

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In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature von Dadgar, A., Schulze, F., Zettler, T., Haberland, K., Clos, R., Straßburger, G., Bläsing, J., Diez, A., Krost, A.

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On the AlAs/GaAs (001) interface dielectric anisotropy von Hunderi, O., Zettler, J.-T., Haberland, K.

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Simultaneous measurement of wafer curvature and true temperature during metalorganic growth of group-III nitrides on silicon and sapphire von Krost, A., Schulze, F., Dadgar, A., Strassburger, G., Haberland, K., Zettler, T.

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In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures von Prall, C., Kaspari, C., Brunner, F., Haberland, K., Weyers, M., Rueter, D.

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Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE von Steins, R., Kaluza, N., Hardtdegen, H., Zorn, M., Haberland, K., Zettler, J.-T.

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MOVPE process development for 650 nm VCSELS using optical in-situ techniques von Zorn, M, Haberland, K, Knigge, A, Bhattacharya, A, Weyers, M, Zettler, J.-T, Richter, W

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Real-time calibration of wafer temperature, growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE von HABERLAND, K, KALUZA, A, ZORN, M, PRISTOVSEK, M, HARDTDEGEN, H, WEYERS, M, ZETTLER, J.-T, RICHTER, W

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In-situ photoluminescence measurements during MOVPE growth of GaN and InGaN MQW structures von Prall, C, Kaspari, C, Brunner, F, Haberland, K, Weyers, M, Rueter, D

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Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques von Zettler, J.-T., Haberland, K., Zorn, M., Pristovsek, M., Richter, W., Kurpas, P., Weyers, M.

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Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III-nitrides von Hardtdegen, H., Kaluza, N., Steins, R., Cho, Y. S., Sofer, Z., Zorn, M., Haberland, K., Zettler, J.-T.

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In-situ determination of interface roughness in MOVPE-grown visible VCSELs by reflectance spectroscopy von Haberland, K, Zorn, M, Klein, A, Bhattacharya, A, Weyers, M, Zettler, J.-T, Richter, W

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Spectroscopic process sensors in MOVPE device production von HABERLAND, K, KURPAS, P, PRISTOVSEK, M, ZETTLER, J.-T, WEYERS, M, RICHTER, W

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Heteroepitaxy of GaN on Silicon: In Situ Measurements von Schulze, F., Haberland, K., Dadgar, Armin, Clos, R., Zettler, T., Krost, A.

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Ellipsometric and reflectance-anisotropy measurements on rotating samples von Haberland, K., Hunderi, O., Pristovsek, M., Zettler, J.-T., Richter, W.

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MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy von Haberland, K., Bhattacharya, A., Zorn, M., Weyers, M., Zettler, J. -T., Richter, W.

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GaAs cap layer growth and In-segregation effects on self-assembled InAs-quantum dots monitored by optical techniques von Steimetz, E., Wehnert, T., Haberland, K., Zettler, J.-T., Richter, W.

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MOVPE growth of (Al, Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy von Haberland, K., Bhattacharya, A., Zorn, M., Weyers, M., Zettler, J. -T., Richter, W.

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In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy von Pristovsek, M., Tsukamoto, S., Koguchi, N., Han, B., Haberland, K., Zettler, J.-T., Richter, W., Zorn, M., Weyers, M.

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