Inactivation of Pectin Methyl Esterase in Orange Juice by Pulsed Electric Fields von Yeom, H.W, Zhang, Q.H, Chism, G.W

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Band diagram for chemical vapor deposition diamond surface conductive layer: Presence of downward band bending due to shallow acceptors von Kono, S., Saito, T., Kang, S.H., Jung, W.Y., Kim, B.Y., Kawata, H., Goto, T., Kakefuda, Y., Yeom, H.W.

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Atomic structure of two-dimensional binary surface alloys: Si(111)-√21×√21 superstructure von Fukaya, Y., Matsuda, I., Hashimoto, M., Kubo, K., Hirahara, T., Yamazaki, S., Choi, W.H., Yeom, H.W., Hasegawa, S., Kawasuso, A., Ichimiya, A.

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Characterization of films and interfaces in n-ZnO/p-Si photodiodes von Lee, J.Y., Choi, Y.S., Choi, W.H., Yeom, H.W., Yoon, Y.K., Kim, J.H., Im, S.

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Effects of Pulsed Electric Fields on the Activities of Microorganisms and Pectin Methyl Esterase in Orange Juice von Yeom, H.W., Streaker, C.B., Zhang, Q.H., Min, D.B.

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Existence of a stable intermixing phase for monolayer Ge on Si(001) von Yeom, H.W., Sasaki, M., Suzuki, S., Sato, S., Hosoi, S., Iwabuchi, M., Higashiyama, K., Fukutani, H., Nakamura, M., Abukawa, T., Kono, S.

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Auger electron diffraction study of the initial stage of Ge heteroepitaxy on Si(001) von Sasaki, M., Abukawa, T., Yeom, H.W., Yamada, M., Suzuki, S., Sato, S., Kono, S.

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Initial stage growth of In and A1 on a single-domain Si(001)2 × 1 surface von Yeom, H.W., Abukawa, T., Nakamura, M., Suzuki, S., Sato, S., Sakamoto, K., Sakamoto, T., Kono, S.

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X-ray photoelectron diffraction and surface core-level shift study of clean InP(001) von Shimomura, M., Sanada, N., Kaneda, G., Takeuchi, T., Suzuki, Y., Fukuda, Y., Huff, W.R.A., Abukawa, T., Kono, S., Yeom, H.W., Kakizaki, A.

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Inactivation of papain by pulsed electric fields in a continuous system von Yeom, Hye Won, Zhang, Q.Howard, Dunne, C.Patrick

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8aSM-9 Adsorption of C2H2 and C2H4 on Si(001) : core-level photoemission von Yeom, H.W., Baek, S.Y., Kim, J.W., Koh, H.

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6aSN-2 Electronic nature of one-dimentional noble metal nanowires on the Si(5 5 12) surface von Ahn, J.R., Yeom, H.W., Kim, Y.J., Lee, H.S., Hwang, C.C., Kim, B.S.

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Initial stage growth and interface formation of Al on Si(001)2 × 1 von Yeom, H.W., Abukawa, T., Takakuwa, Y., Nakamura, M., Kimura, M., Kakizaki, A., Kono, S.

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Processing of yogurt-based products with pulsed electric fields: microbial, sensory and physical evaluations von Yeom, H.W, Evrendilek, G.A, Jin, Z.T, Zhang, Q.H

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Dual nature of a charge-density-wave transition on In/Cu(001) von Nakagawa, T., Okuyama, H., Nishijima, M., Aruga, T., Yeom, H. W., Rotenberg, E., Krenzer, B., Kevan, S. D.

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Order–disorder phase transition on the Pb-adsorbed Si(1 1 0) surface von Kim, Y.K., Ahn, J.R., Cho, E.S., An, K.-S., Yeom, H.W., Koh, H., Rotenberg, E., Park, C.Y.

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Comment on “STM studies of initial In growth on Si(100)2×1: the In ad-dimer chain and its I– V characteristics” von Yeom, H.W.

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5a-H-3 High resolution photoemission study of low temperature oxidation of the Si(001)surface:anomalous Si 2p core level shifts von H.W, YEOM, HAMAMATSU, H., R.I.G, UHRBERG

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Atomic and Electronic-Band Structures of Anomalous Carbon Dimers on 3C-SiC (001)-c(2 [times] 2) von Yeom, H.W., Shimomura, M., Kono, S., Kitamura, J., Hara, S., Yoshida, S., Okushi, H., Kajimura, K., Tono, K., Matsuda, I., Ohta, T., Mun, B.S., Fadley, C.S., Fadley, C.S., Huff, W.A.

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28a-YR-3 Surface band structure of anomalous carbon dimers on the 3C-SiC(001)c(2x2) surface von YEOM, H.W, TONO, K., MATSUDA, I., OHTA, T.

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