An axisymmetric unstructured finite volume method applied to the numerical modeling of an atmospheric pressure gas discharge von Zakari, M., Caquineau, H., Hotmar, P., Ségur, P.

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Influence of pulsed gas injections on the stability of Townsend dielectric barrier discharges in nitrogen at atmospheric pressure von Cacot, L, Carnide, G, Kahn, M L, Caquineau, H, Clergereaux, R, Naudé, N, Stafford, L

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Investigation of memory effect in atmospheric pressure dielectric barrier discharge in nitrogen with small oxygen or nitric oxide addition von Tyl, C, Lin, X, Bouzidi, M C, Dap, S, Caquineau, H, Ségur, P, Gherardi, N, Naudé, N

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Influence of the temporal variations of plasma composition on the cyclic formation of dust in hexamethyldisiloxane-argon radiofrequency discharges: Analysis by time-resolved mass s... von Despax, B., Gaboriau, F., Caquineau, H., Makasheva, K.

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Cyclic powder formation during pulsed injection of hexamethyldisiloxane in an axially asymmetric radiofrequency argon discharge von Despax, B., Makasheva, K., Caquineau, H.

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Influence of gas flow dynamics on discharge stability and on the uniformity of atmospheric pressure PECVD thin film von Caquineau, H, Enache, I, Gherardi, N, Naudé, N, Massines, F

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Influence of the relative humidity on film formation by vapor induced phase separation von Caquineau, H., Menut, P., Deratani, A., Dupuy, C.

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Low temperature silicon oxide deposition on polymer powders in a fluidized bed coupled to a cold remote plasma von Caquineau, H., Aiche, L., Vergnes, H., Despax, B., Caussat, B.

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Conformity of Silica-like Thin Films Deposited by Atmospheric Pressure Townsend Discharge and Transport Mechanisms von Savin de Larclause, I., Paulmier, T., Enache, I., Caquineau, H., Raynaud, P., Massines, F., Gherardi, N.

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Power dissipation analysis in N2O RF discharges using Monte Carlo modelling von Younis, G, Despax, B, Yousfi, M, Caquineau, H

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Variations in the physico-chemical properties of near-stoichiometric silica deposited from SiH4-N2O and SiH4-N2O-He radiofrequency discharges von CHAYANI, M, CAQUINEAU, H, DESPAX, B, BANDET, J, BERJOAN, R

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Power dissipation analysis in N2O/He RF discharges using particle modelling von Despax, B, Yousfi, M, Younis, G, Caquineau, H

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Influence of the reactor design in the case of silicon nitride PECVD von Caquineau, H., Despax, B.

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RF discharge modelling in a N2O/SiH4 mixture for SiO2 deposition and comparison with experiment von Radouane, K, Date, L, Yousfi, M, Despax, B, Caquineau, H

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Analysis of the N2O dissociation by r.f. discharges in a plasma reactor von Date, L., Radouane, K., Caquineau, H., Despax, B., Couderc, J.P., Yousfi, M.

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Analysis of the N2O dissociation in a RF discharge reactor von Date, L, Radouane, K, Despax, B, Yousfi, M, Caquineau, H, Hennad, A

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Structural properties of N-rich a-Si - N:H films with a low electron-trapping rate von Dupont, G, Caquineau, H, Despax, B, Berjoan, R, Dollet, A

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Power dissipation analysis in N 2 O RF discharges using Monte Carlo modelling von Younis, G, Despax, B, Yousfi, M, Caquineau, H

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Power dissipation analysis in N 2 O/He RF discharges using particle modelling von Despax, B, Yousfi, M, Younis, G, Caquineau, H

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Variations in the physico-chemical properties of near-stoichiometric silica deposited from SiH 4–N 2O and SiH 4–N 2O–He radiofrequency discharges von Chayani, M., Caquineau, H., Despax, B., Bandet, J., Berjoan, R.

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