ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation von Šimonka, Vito, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

Volltext

Curvature based feature detection for hierarchical grid refinement in TCAD topography simulations von Lenz, Christoph, Toifl, Alexander, Quell, Michael, Rodrigues, Francio, Hössinger, Andreas, Weinbub, Josef

Volltext

Comparison of the Parallel Fast Marching Method, the Fast Iterative Method, and the Parallel Semi-ordered Fast Iterative Method von Weinbub, Josef, Hössinger, Andreas

Volltext

Surface Morphology of 4H-SiC after Thermal Oxidation von Šimonka, Vito, Selberherr, Siegfried, Weinbub, Josef, Woerle, Judith, Camarda, Massimo, Sigg, Hans, Müller, Elisabeth, Hössinger, Andreas, Grossner, Ulrike

Volltext

Accelerating Flux Calculations Using Sparse Sampling von Gnam, Lukas, Manstetten, Paul, Hössinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

Volltext

Accelerated redistancing for level set-based process simulations with the fast iterative method von Weinbub, Josef, Hössinger, Andreas

Volltext

Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon von Aguinsky, Luiz Felipe, Rodrigues, Frâncio, Wachter, Georg, Trupke, Michael, Schmid, Ulrich, Hössinger, Andreas, Weinbub, Josef

Volltext

Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon Carbide von Weinbub, Josef, Šimonka, Vito, Selberherr, Siegfried, Hössinger, Andreas

Volltext

3D modeling of feature-scale fluorocarbon plasma etching in silica von Rodrigues, Frâncio, Felipe Aguinsky, Luiz, Lenz, Christoph, Hössinger, Andreas, Weinbub, Josef

Volltext

Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity von Manstetten, Paul, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

Volltext

Parallelized Construction of Extension Velocities for the Level-Set Method von Quell, Michael, Manstetten, Paul, Hössinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

Volltext

Parallelization of a Monte Carlo ion implantation simulator von Hossinger, A., Langer, E., Selberherr, S.

Volltext

Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide von Simonka, Vito, Hossinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

Volltext

Sparse Surface Speed Evaluation on a Dynamic Three-Dimensional Surface Using an Iterative Partitioning Scheme von Manstetten, Paul, Gnam, Lukas, Hössinger, Andreas, Selberherr, Siegfried, Weinbub, Josef

Volltext

Modeling Incomplete Conformality during Atomic Layer Deposition in High Aspect Ratio Structures von Luiz Felipe Aguinsky, Rodrigues, Frâncio, Reiter, Tobias, Klemenschits, Xaver, Filipovic, Lado, Hössinger, Andreas, Weinbub, Josef

Volltext

Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes von Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., Selberherr, S.

Volltext

A novel approach to three-dimensional semiconductor process simulation: Application to thermal oxidation von Suvorov, Vasily, Hössinger, Andreas, Djurić, Zoran, Ljepojevic, Neboysha

Volltext

Rigorous integration of semiconductor process and device simulators von Binder, T., Hossinger, A., Selberherr, S.

Volltext

A Novel Surface Mesh Simplification Method for Flux-Dependent Topography Simulations of Semiconductor Fabrication Processes von Lenz, Christoph, Scharinger, Alexander, Manstetten, Paul, Hössinger, Andreas, Weinbub, Josef

Volltext

A Study of Boron Implantation into High Ge Content SiGe Alloys von Wittmann, Robert, Uppal, Suresh, Hoessinger, Andreas, Cervenka, Johann, Selberherr, Siegfried

Volltext