Growth rates of dry thermal oxidation of 4H-silicon carbide von Šimonka, V., Hössinger, A., Weinbub, J., Selberherr, S.

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Transient model for electrical activation of aluminium and phosphorus-implanted silicon carbide von Šimonka, V., Toifl, A., Hössinger, A., Selberherr, S., Weinbub, J.

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Continuum level-set model for anisotropic wet etching of patterned sapphire substrates von Toifl, A, Rodrigues, F, Aguinsky, L F, Hössinger, A, Weinbub, J

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Surface Morphology of 4H-SiC after Thermal Oxidation von Selberherr, Siegfried, Woerle, Judith, Grossner, Ulrike, Šimonka, Vito, Camarda, Massimo, Müller, Elisabeth, Hössinger, Andreas, Sigg, Hans, Weinbub, Josef

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Monte Carlo Simulation of Ion Implantation for Doping of Strained Silicon MOSFETs von Wittmann, R., Hossinger, A., Selberherr, S.

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Monte Carlo Simulation of Boron Implantation into (100) Germanium von Wittmann, R., Hossinger, A., Cervenka, J., Uppal, S., Selberherr, S.

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Anisotropic Mesh Refinement for the Simulation of Three-Dimensional Semiconductor Manufacturing Processes von Wessner, W., Cervenka, J., Heitzinger, C., Hossinger, A., Selberherr, S.

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Rigorous integration of semiconductor process and device simulators von Binder, T., Hossinger, A., Selberherr, S.

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On smoothing three-dimensional Monte Carlo ion implantation simulation results von Heitzinger, C., Hossinger, A., Selberherr, S.

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Parallelization of a Monte Carlo ion implantation simulator von Hossinger, A., Langer, E., Selberherr, S.

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A Study of Boron Implantation into High Ge Content SiGe Alloys von Wittmann, Robert, Uppal, Suresh, Hoessinger, Andreas, Cervenka, Johann, Selberherr, Siegfried

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A multistage smoothing algorithm for coupling cellular and polygonal datastructures von Hossinger, A., Cervenka, J., Selberherr, S.

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Error estimated driven anisotropic mesh refinement for three-dimensional diffusion simulation von Wessner, W., Heitzinger, C., Hossinger, A., Selberherr, S.

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A strategy to enforce the discrete minimax principle on finite element meshes von Binder, T., Ceric, H., Hossinger, A., Selberherr, S.

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Development and performance analysis of real-world applications for distributed and parallel architectures von Fahringer, T., Blaha, P., Hössinger, A., Luitz, J., Mehofer, E., Moritsch, H., Scholz, B.

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An algorithm for smoothing three-dimensional Monte Carlo ion implantation simulation results von Heitzinger, Clemens, Hössinger, Andreas, Selberherr, Siegfried

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Parallel Monte Carlo simulation of ion implantation von Hossinger, A., Langer, E.

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Investigating heart rate responses of children to active travel: a mixed effects modeling analysis von Su, Shun, Stark, Juliane, Hössinger, Reinhard, Susilo, Yusak

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A joint time-assignment and expenditure-allocation model: value of leisure and value of time assigned to travel for specific population segments von Hössinger, Reinhard, Aschauer, Florian, Jara-Díaz, Sergio, Jokubauskaite, Simona, Schmid, Basil, Peer, Stefanie, Axhausen, Kay W., Gerike, Regine

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ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation von Šimonka, Vito, Hössinger, Andreas, Weinbub, Josef, Selberherr, Siegfried

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