Dislocation movement in GaN films von Moram, M. A., Sadler, T. C., Häberlen, M., Kappers, M. J., Humphreys, C. J.

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Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth von Häberlen, M., Badcock, T. J., Moram, M. A., Hollander, J. L., Kappers, M. J., Dawson, P., Humphreys, C. J., Oliver, R. A.

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High-efficiency InGaN/GaN quantum well structures on large area silicon substrates von Zhu, D., McAleese, C., Häberlen, M., Kappers, M. J., Hylton, N., Dawson, P., Radtke, G., Couillard, M., Botton, G. A., Sahonta, S.-L., Humphreys, C. J.

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Growth of cubic GaN on nano-patterned 3C-SiC/Si (001) substrates von Kemper, R.M., Weinl, M., Mietze, C., Häberlen, M., Schupp, T., Tschumak, E., Lindner, J.K.N., Lischka, K., As, D.J.

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Structural characterization of cubic and hexagonal GaN thin films grown by IBA–MBE on SiC/Si von Häberlen, M., Gerlach, J.W., Murphy, B., Lindner, J.K.N., Stritzker, B.

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The effects of annealing on non-polar (1 1 2¯ 0) a-plane GaN films von Hao, Rui, Zhu, T., Häberlen, M., Chang, T.Y., Kappers, M.J., Oliver, R.A., Humphreys, C.J., Moram, M.A.

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Formation of defects in cubic GaN grown on nano-patterned 3C-SiC (001) von Kemper, R. M., Häberlen, M., Schupp, T., Weinl, M., Bürger, M., Ruth, M., Meier, C., Niendorf, T., Maier, H. J., Lischka, K., As, D. J., Lindner, J. K. N.

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Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation von Zirkelbach, F., Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Monte Carlo simulation study of a selforganisation process leading to ordered precipitate structures von Zirkelbach, F., Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Formation and annealing of periodically arranged amorphous SiCx nanoclusters in silicon von Lindner, J.K.N, Häberlen, M, Schmid, M, Attenberger, W, Stritzker, B

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Monte-Carlo simulation study of the self-organization of nanometric amorphous precipitates in regular arrays during ion irradiation von Zirkelbach, F., Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Creation of internal point defect drains in silicon by carbon implantation von Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Quantitative analysis of thin film compositions using EFTEM combined with RBS and ERDA von Lindner, J.K.N., Häberlen, M., Schwarz, F., Thorwarth, G., Hammerl, C., Assmann, W., Stritzker, B.

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Relaxation of a strained 3C-SiC(1 1 1) thin film on silicon by He + and O + ion beam defect engineering von Häberlen, M., Murphy, B., Stritzker, B., Lindner, J.K.N.

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High-efficiency InGaN/GaN quantum well structures on large area silicon substrates : Indium Nitride and Related Alloys von ZHU, D, MCALEESE, C, HUMPHREYS, C. J, HÄBERLEN, M, KAPPERS, M. J, HYLTON, N, DAWSON, P, RADTKE, G, COUILLARD, M, BOTTON, G. A, SAHONTA, S.-L

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Effect of overgrowth conditions on the optical properties of lateral epitaxially overgrown a -plane GaN von Badcock, T. J., Häberlen, M., Kappers, M. J., Moram, M. A., Dawson, P., Humphreys, C. J., Oliver, R. A.

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Quantification of EFTEM elemental maps using ion beam techniques von Lindner, J.K.N., Häberlen, M., Schwarz, F., Thorwarth, G., Stritzker, B., Hammerl, C., Assmann, W.

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Effect of substrate orientation on defect generation and annealing behaviour in carbon implanted silicon von Häberlen, M., Lindner, J.K.N., Stritzker, B.

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Formation and annealing of periodically arranged amorphous SiC x nanoclusters in silicon von Lindner, J.K.N, Häberlen, M, Schmid, M, Attenberger, W, Stritzker, B

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On the balance between ion beam induced nanoparticle formation and displacive precipitate resolution in the C–Si system von Lindner, J.K.N., Häberlen, M., Thorwarth, G., Stritzker, B.

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