Facet degradation of GaN heterostructure laser diodes von Schoedl, Thomas, Schwarz, Ulrich T., Kümmler, Volker, Furitsch, Michael, Leber, Andreas, Miler, Andreas, Lell, Alfred, Härle, Volker

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Influence of ridge geometry on lateral mode stability of (Al,In)GaN laser diodes von Schwarz, Ulrich T., Pindl, Markus, Sturm, Evi, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred, Härle, Volker

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Substrate Modes of (Al,In)GaN Semiconductor Laser Diodes on SiC and GaN Substrates von Laino, V., Roemer, F., Witzigmann, B., Lauterbach, C., Schwarz, U.T., Rumbolz, C., Schillgalies, M.O., Furitsch, M., Lell, A., Harle, V.

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Influence of ridge geometry on lateral mode stability of (In/Al)GaN laser diodes von Schwarz, Ulrich T., Pindl, Markus, Sturm, Evi, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred, Härle, Volker

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Strain, wing tilt and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates von Gmeinwieser, Nikolaus, Engl, Karl, Schwarz, Ulrich T., Zweck, Josef, Wegscheider, Werner, Miller, Stephan, Leber, Andreas, Weimar, Andreas, Lell, Alfred, Härle, Volker

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Revealing the Defect Structure in Laterally Overgrown GaN Stripes Utilizing Photoelectrochemical Etching Techniques von Riedl, Thomas, Hitzel, Frank, Hangleiter, Andreas, Miller, Stephan, Weimar, Andreas, Brüderl, Georg, Lell, Alfred, Härle, Volker

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Facet degradation of (Al,In)GaN laser diodes von Schoedl, Thomas, Schwarz, Ulrich T., Miller, Stephan, Leber, Andreas, Furitsch, Michael, Lell, Alfred, Härle, Volker

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OPTOELECTRONIC COMPONENT AND HOUSING FOR AN OPTOELECTRONIC COMPONENT von HÄRLE, Volker

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Near-field and far-field dynamics of (Al,In)GaN laser diodes von Schwarz, Ulrich T., Pindl, Markus, Wegscheider, Werner, Eichler, Christoph, Scholz, Ferdinand, Furitsch, Michael, Leber, Andreas, Miller, Stephan, Lell, Alfred, Härle, Volker

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Radiative Lifetime of Excitons in GaInN/GaN Quantum Wells von Seo Im, Jin, Härle, Volker, Scholz, Ferdinand, Hangleiter, Andreas

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METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP von HÄRLE, VOLKER

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METHOD FOR THE PRODUCTION OF A PLURALITY OF OPTO-ELECTRONIC SEMICONDUCTOR CHIPS AND OPTO-ELECTRONIC SEMICONDUCTOR CHIP von HÄRLE, VOLKER

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(Invited) Wafer Bonding for the Manufacture of High-Brightness and High-Efficiency Light-Emitting Diodes von Plößl, Andreas E., Baur, Johannes, Eißler, Dieter, Engl, Karl, Härle, Volker, Hahn, Berthold, Heindl, Alexander, Illek, Stefan, Klemp, Christoph, Rode, Patrick, Streubel, Klaus, Tangrin, Ivar

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Observation of temperature-independent longitudinal-mode patterns in violet-blue InGaN-based laser diodes von Eichler, C., Schad, S.-S., Scholz, F., Hofstetter, D., Miller, S., Weimar, A., Lell, A., Harle, V.

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Time resolved study of laser diode characteristics during pulsed operation von Eichler, Christoph, Schad, Sven-Silvius, Seyboth, Matthias, Habel, Frank, Scherer, Marcus, Miller, Stephan, Weimar, Andreas, Lell, Alfred, Härle, Volker, Hofstetter, Daniel

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Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser von Eichler, Christoph, Hofstetter, Daniel, Chow, Weng W., Miller, Stephan, Weimar, Andreas, Lell, Alfred, Härle, Volker

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METHOD FOR LATERAL SEPARATION OF A SEMICONDUCTOR WAFER STACK von HÄRLE, Volker, EICHLER, Christoph

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Optoelectronic component and package for an optoelectronic component von Härle, Volker

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Method for the production of a plurality of opto-electronic semiconductor chips and opto-electronic semiconductor chip von Härle, Volker

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Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip von Härle, Volker

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