An efficient room-temperature silicon-based light-emitting diode von Homewood, K. P, Ng, Wai Lek, Lourenço, M. A, Gwilliam, R. M, Ledain, S, Shao, G

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Super-enhancement of 1.54 μm emission from erbium codoped with oxygen in silicon-on-insulator von Lourenço, M. A., Milošević, M. M., Gorin, A., Gwilliam, R. M., Homewood, K. P.

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Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator von Wisby, I., de Graaf, S. E., Gwilliam, R., Adamyan, A., Kubatkin, S. E., Meeson, P. J., Tzalenchuk, A. Ya, Lindström, T.

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Reproducibility of soft tissue landmarks on three-dimensional facial scans von Gwilliam, Jamie R., Cunningham, Susan J., Hutton, Tim

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Enhancement of the high-magnetic-field critical current density of superconducting MgB2 by proton irradiation von Bugoslavsky, Y, Cohen, L F, Perkins, G K, Polichetti, M, Tate, T J, Gwilliam, R, Caplin, A D

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Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out von Litvinenko, K.L., Bowyer, E.T., Greenland, P.T., Stavrias, N., Li, Juerong, Gwilliam, R., Villis, B.J., Matmon, G., Pang, M.L.Y., Redlich, B., van der Meer, A.F.G., Pidgeon, C.R., Aeppli, G., Murdin, B.N.

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Collective electronic excitations in the ultra violet regime in 2-D and 1-D carbon nanostructures achieved by the addition of foreign atoms von Bangert, U., Pierce, W., Boothroyd, C., Pan, C.-T., Gwilliam, R.

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The effect of aluminium on the post-anneal concentration of ion implanted bismuth in silica thin films von Southern-Holland, R., Halsall, M.P., Crowe, I.F., Yang, P., Gwilliam, R.M.

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Donor ionization in size controlled silicon nanocrystals: The transition from defect passivation to free electron generation von Crowe, I. F., Papachristodoulou, N., Halsall, M. P., Hylton, N. P., Hulko, O., Knights, A. P., Yang, P., Gwilliam, R. M., Shah, M., Kenyon, A. J.

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Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre von Berhanuddin, D. D., Lourenço, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M., Homewood, K. P.

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Correction: Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out von Litvinenko, K. L., Bowyer, E. T., Greenland, P. T., Stavrias, N., Li, Juerong, Gwilliam, R., Villis, B. J., Matmon, G., Pang, M. L. Y., Redlich, B., van der Meer, A. F. G., Pidgeon, C. R., Aeppli, G., Murdin, B. N.

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Characterization of a-FeSi2 c-Si heterojunctions for photovoltaic applications von Antwis, L, Gwilliam, R, Smith, A, Homewood, K, Jeynes, C

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The Effect of Temperature to the Formation of Optically Active Point-defect Complex, the Carbon G-centre in Pre-amorphised and Non-amorphised Silicon von Berhanuddin, D D, Lourenço, M A, Gwilliam, R M, Homewood, K P

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Direct observation of indium precipitates in silicon following high dose ion implantation von Dudeck, K J, Huante-Ceron, E, Knights, A P, Gwilliam, R M, Botton, G A

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Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon von Rudawski, N.G., Jones, K.S., Gwilliam, R.

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Corrigendum: Coherent creation and destruction of orbital wavepackets in Si:P with electrical and optical read-out von Litvinenko, K L, Bowyer, E T, Greenland, P T, Stavrias, N, Li, Juerong, Gwilliam, R, Villis, B J, Matmon, G, Pang, M L Y, Redlich, B, van der Meer, A F G, Pidgeon, C R, Aeppli, G, Murdin, B N

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High temperature luminescence of Dy3+ in crystalline silicon in the optical communication and eye-safe spectral regions von Lourenço, M A, Mustafa, Z, Ludurczak, W, Wong, L, Gwilliam, R M, Homewood, K P

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Characterization of a-FeSi 2 /c-Si heterojunctions for photovoltaic applications von Antwis, L, Gwilliam, R, Smith, A, Homewood, K, Jeynes, C

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Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si von Pawlak, B. J., Cowern, N. E. B., Ahn, C., Vandervorst, W., Gwilliam, R., van Berkum, J. G. M.

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Dopant-stress synergy in Si solid-phase epitaxy von Rudawski, N. G., Jones, K. S., Gwilliam, R.

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