A Study of hole Scattering in Ge by Cyclotron Resonance von Gershenson, E. M., Gusinskii, E. N., Rabinovich, R. I., Soina, N. V.

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Nuclear methods in technology of Si:Er structures von Naidenov, V.O., Sobolev, N.A., Alexandrov, O.B., Bresler, M.S., Gusev, O.V., Gusinskii, G.M., Shek, E.I., Makaviichuk, M.I., Parshin, E.O.

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Influence of oxygen on the photoluminescence intensity of erbium (at 1.54 µm) in erbium-doped a-Si:H films von Kudoyarova, V. Kh, Kuznetsov, A. N., Terukov, E. I., Gusev, O. B., Kudryavtsev, Yu. A., Ber, B. Ya, Gusinskii, G. M., Fuhs, W., Weiser, G., Kuehne, H.

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Visualization of the ion projected range region in GaAs irradiated with argon ions von Busov, V. M., Venus, G. B., Gusinskii, G. M., Il’inskaya, N. D., Naidenov, V. O., Pasternak, A. A., Portnoi, E. L., Troshkov, S. I.

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Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions von Bhattachar-yya, D., Vinokurov, D. A., Gusinskii, G. M., Elyukhin, V. A., Kovalenkov, O. V., Kyutt, R. N., Marsh, J. H., Naidenov, V. O., Portnoi, E. L.

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Defect Engineering in Erbium-Doped Silicon Structure Technology von Gusinskii, G.M., Alexandrov, O.V., Stepanov, V.I., Troshina, E.P., Vyzhigin, Yu.V., Sheck, E.I., Gresserov, B.N., Sobolev, N.A., Chepik, L.F., Naidenov, V.O.

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