(Invited) Vertical Nanowire FET Integration and Device Aspects von Veloso, Anabela, Altamirano-Sánchez, Efraín, Brus, Stephan, Chan, B. T., Cupak, Miroslav, Dehan, Morin, Delvaux, Christie, Devriendt, Katia, Eneman, Geert, Ercken, Monique, Huynh-Bao, Trong, Ivanov, Tsvetan, Matagne, Philippe, Merckling, Clement, Paraschiv, Vasile, Ramesh, Siva, Rosseel, Erik, Rynders, Luc, Sibaja-Hernandez, Arturo, Suhard, Samuel, Tao, Zheng, Vecchio, Emma, Waldron, Niamh, Yakimets, Dmitry, De Meyer, Kristin, Mocuta, Dan, Collaert, Nadine, Thean, Aaron

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(Invited) Contacts in Advanced CMOS: History and Emerging Challenges von Lavoie, Christian, Adusumilli, Praneet, Carr, Adra V, Jordan Sweet, Jean S., Ozcan, Ahmet S, Levrau, Elisabeth, Breil, Nicolas, Alptekin, Emre

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Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits von Green, M. L., Gusev, E. P., Degraeve, R., Garfunkel, E. L.

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Cobalt CMP Development for 7nm Logic Device von Wu, Changhong, Han, Ja-Hyung, Shi, Xingzhao, Koli, Dinesh R, Penigalapati, Dinesh

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Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications von Gusev, E.P., Cabral, C., Copel, M., D’Emic, C., Gribelyuk, M.

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(Invited) Laser Annealing in CMOS Manufacturing von Gluschenkov, Oleg, Jagannathan, Hemanth

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(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective von Moens, Peter, Banerjee, Abhishek, Constant, Aurore, Coppens, Peter, Caesar, Markus, Li, Zilan, Vandeweghe, Steven, Declercq, Frederick, Padmanabhan, Balaji, Jeon, Woochul, Guo, Jia, Salih, Ali, Tack, Marnix, Meneghini, Matteo, Dalcanale, Stefano, Tajilli, A, Meneghesso, Gaudenzio, Zanoni, Enrico, Uren, Mike, Chatterjee, Indranil, Karboyan, Serge, Kuball, Martin

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(Invited) Materials and Processes for Superconducting Qubits and Superconducting Electronic Circuits on 300mm Wafers von Papa Rao, Satyavolu S., Hobbs, Christopher, Olson, Stephen, Foroozani, Neda, Chong, Hyuncher, Stamper, Harlan, Martinick, Brian, Ashworth, Dominic, Bunday, Benjamin, Malloy, Matthew, Holland, Eric, Nalaskowski, Jakub, Kearney, Patrick, Ngai, Tat, Wells, Ilyssa, Yakimov, Michael, Oktyabrsky, Serge, O'Brien, Brendan, Kaushik, Vidya, Dunn, Kathleen A, Beckmann, Karsten, Bennett, Stephen, Rodgers, Martin, Murray, Thomas, Novak, Steven, Baker-O'Neal, Brett, Borst, Christopher, Osborn, Kevin D, Liehr, Michael

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(Invited) Complementary III-V Heterojunction Tunnel FETs Monolithically Integrated on Silicon von Convertino, Clarissa, Schmid, Heinz, Czornomaz, Lukas, Riel, Heike, Sant, Saurabh, Schenk, Andreas, Moselund, Kirsten

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Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues von Gusev, E.P, Cartier, E, Buchanan, D.A, Gribelyuk, M, Copel, M, Okorn-Schmidt, H, D’Emic, C

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(Invited) Gate-All-Around Transistors Based on Vertically Stacked Si Nanowires von Mertens, Hans, Ritzenthaler, Romain, Hikavyy, Andriy Yakovitch, Kim, Min-Soo, Tao, Zheng, Wostyn, Kurt, Schram, Tom, Kunnen, Eddy, Ragnarsson, Lars-Åke, Dekkers, Harold F. W., Hopf, Toby, Devriendt, Katia, Tsvetanova, Diana, Chew, Soon Aik, Kikuchi, Yoshiaki, Van Besien, Els, Rosseel, Erik, Mannaert, Geert, De Keersgieter, An, Chasin, Adrian, Kubicek, Stefan, Dangol, Anish, Demuynck, Steven, Barla, Kathy, Mocuta, Dan, Horiguchi, Naoto

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Electrochemical Characterization of Ruthenium Using Potassium Bromate as Oxidizer for Titania-Based CMP Slurry von Yadav, Kavita, Ramachandran, Manivannan, Victoria, Selvam Noyel

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(Invited) Extending Advanced CMOS Scaling with SiGe Channel Materials von Carter, Rick J, Sporer, Ryan, McArdle, Timothy J, Mulfinger, George Robert, Holt, Judson Robert, Beasor, Scott, Child, Amy, Fronheiser, Jody, Wahl, Jeremy A, Geisler, Holm, Kluth, George J, Triyoso, Dina H, Punchihewa, Kasun, Rana, Uzma, Vanamurthy, Laks, Sohn, D K

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Plasma-Based Copper Etch Process and Reliability von Gao, Baizhen, Gao, Yong, Kuo, Yue, Yuan, Tao

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(Invited) Enabling On-Device Learning with Deep Spiking Neural Networks for Speech Recognition von Soures, Nicholas, Kudithipudi, Dhireesha, Jacobs-Gedrim, Robin Bay, Agarwal, Sapan, Marinella, Matthew

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Pinch-Off Plasma CVD Deposition Process and Material Technology for Nano-Device Air Gap/Spacer Formation von Nguyen, Son van, Haigh, Thomas J, Cheng, Kangguo, Penny, C., Park, Chanro, Li, J., Mehta, Sanjay C, Yamashita, Tenko, Jiang, Liying, Canaperi, Don

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(Invited) Beyond CMOS: Memristor and Its Application for Next Generation Storage and Computing von Liu, Chenchen, Liu, Fuqiang, Li, Hai (Helen)

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Effect of Surface Preparation on the Residual Oxide Thickness and Material Loss of InGaAs Layer von Na, Jihoon, Lim, Sangwoo

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Charge detrapping in HfO2 high-κ gate dielectric stacks von Gusev, E. P., D’Emic, C. P.

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(Invited) A Nonvolatile SRAM Based on Ferroelectric HfO2 Capacitor for IoT Power Management von Kobayashi, Masaharu, Ueyama, Nozomu, Hiramoto, Toshiro

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