Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates von Yablonskii, G.P., Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Shulga, T.S., Stognij, A.I., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

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Effect of delocalization of the donor states on the donor–acceptor recombination in zinc selenide von Gurskii, A.L

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Sequence of phase transformations at the formation of the strontium chrome-molybdate compound von Kalanda, N. A., Gurskii, A. L., Yarmolich, M. V., Petrov, A. V., Bobrikov, I. A., Ivanshina, O. Yu, Sumnikov, S. V., Maia, F., Zhaludkevich, A. L., Demyanov, S. E.

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Improving the Accuracy of Determining the Shape of Optical Spectra by Eliminating Interference Effects Using Fourier Analysis von Gurskii, A. L., Peuneva, N. A.

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Luminescence Properties of Strained GaN Epilayers and Spatial Configurations of Silicon Impurity and Related Defects von Gurskii, A.L., Lutsenko, E.V., Zelenkovskii, V.M., Bezjazychnaja, T.V., Pavlovskii, V.N., Zubialevich, V.Z., Schineller, B., Schön, O., Yablonskii, G.P., Heuken, M.

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Influence of thermal annealing on photoluminescence and structural properties of N, N′-diphenyl- N, N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine (α-NPD) organic thin films... von Osipov, K.A., Pavlovskii, V.N., Lutsenko, E.V., Gurskii, A.L., Yablonskii, G.P., Hartmann, S., Janssen, A., Johannes, H.-H., Caspary, R., Kowalsky, W., Meyer, N., Gersdorff, M., Heuken, M., van Gemmern, P., Zimmermann, C., Jessen, F., Kalisch, H., Jansen, R.H.

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Luminescence and Stimulated Emission from GaN on Silicon Substrates Heterostructures von Yablonskii, G.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Gurskii, A.L., Kalisch, H., Szymakowskii, A., Jansen, R.A., Alam, A., Dikme, Y., Schineller, B., Heuken, M.

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Influence of MQW growth temperature and post-epitaxial annealing on luminescence and laser properties of InGaN/GaN MQW heterostructures grown by MOCVD on sapphire substrates von Gurskii, A.L., Pavlovskii, V.N., Lutsenko, E.V., Zubialevich, V.Z., Yablonskii, G.P., Kalisch, H., Szymakowski, A., Jansen, R.H., Alam, A., Schineller, B., Heuken, M.

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Quantum defect approach for the effect of electron–phonon coupling on impurity recombination in semiconductors von Gurskii, A.L., Voitikov, S.V.

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Luminescence of ZnO monocrystals at excitation by streamer discharges and laser radiation von Gladyshchuk, A.A., Gurskii, A.L., Nikitenko, V.A., Parashchuk, V.V., Tvoronovich, L.N., Yablonskii, G.P.

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Thermal Stability of ZnMgSSe/ZnSe Laser Heterostructures von Marko, I.P., Lutsenko, E.V., Yablonskii, G.P., Gurskii, A.L., Kalisch, H., Heime, K., Heuken, M., Walther, T.

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A Comparative Study of the Near Band Edge Luminescence of Epitaxial ZnSe:N Grown by MBE and MOVPE von Gurskii, A.L., Hamadeh, H., Kalisch, H., Heuken, M., Yablonskii, G.P., Heime, K.

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The role of impurity bands and electron–phonon interaction in formation of near-band-edge PL spectra of compensated ZnSe von Gurskii, A.L, Voitikov, S.V, Hamadeh, H, Kalisch, H, Heuken, M, Heime, K

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Time- and Temperature-Resolved Photoluminescence of GaN:Mg Epitaxial Layers Grown by MOVPE von Gurskii, A.L., Marko, I.P., Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Yablonskii, G.P., Schineller, B., Schön, O., Heuken, M.

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Growth, Stimulated Emission, Photo- and Electroluminescence of InGaN/GaN EL-Test Heterostructures von Lutsenko, E.V., Pavlovskii, V.N., Zubialevich, V.Z., Stognij, A.I., Gurskii, A.L., Hryshanau, V.A., Shulenkov, A.S., Yablonskii, G.P., Schön, O., Protzmann, H., Lünenbürger, M., Schineller, B., Dikme, Y., Jansen, R.H., Heuken, M.

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Low-temperature growth and nitrogen doping of ZnSe using diethylzinc and ditertiarybutylselenide in a plasma-stimulated low-pressure metalorganic vapour phase epitaxy system von Taudt, W., Wachtendorf, B., Beccard, R., Wahid, A., Heuken, M., Gurskii, A.L., Vakarelska, K.

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Optical properties and lasing of ZnMgSSe/ZnSSe/ZnSe heterostructures grown by MOVPE von Gurskii, A.L, Lutsenko, E.V, Yablonskii, G.P, Hamadeh, H, Kalisch, H, Schineller, B, Heuken, M

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Optical and electrical properties of MOVPE-grown ZnSe:N using triallylamine as a nitrogen precursor von Gurskii, A.L., Taudt, W., Lampe, S., Hamadeh, H., Sauerländer, F., Germain, M., Basilavecchia, M., Evrard, R., Yablonskii, G.P., Heuken, M.

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Structure of free exciton luminescence spectra in heteroepitaxial ZnSe/GaAs von Gurskii, A.L., Rakovich, Yu.P., Karpuk, M.M., Gladyshchuk, A.A., Yablonskii, G.P., Hamadeh, H., Taudt, W., Heuken, M.

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Near-band-edge photoluminescence of MOVPE-grown undoped and nitrogen-doped ZnSe von Gurskii, A.L., Marko, I.P., Yuvchenko, V.N., Yablonskii, G.P., Hamadeh, H., Taudt, W., Söllner, J., Kalisch, H., Heuken, M.

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