High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET von Shen, Zhanwei, Zhang, Feng, Yan, Guoguo, Wen, Zhengxin, Zhao, Wanshun, Wang, Lei, Liu, Xingfang, Sun, Guosheng, Zeng, Yiping

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Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC von Shen, Zhanwei, Zhang, Feng, Chen, Jun, Fu, Zhao, Liu, Xingfang, Yan, Guoguo, Lv, Bowen, Wang, Yinshu, Wang, Lei, Zhao, Wanshun, Sun, Guosheng, Zeng, Yiping

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Surface Uniformity of Wafer-Scale 4H-SiC Epitaxial Layers Grown under Various Epitaxial Conditions von Zhao, Siqi, Wang, Jiulong, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang

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The thermal stability study and improvement of 4H-SiC ohmic contact von Liu, Shengbei, He, Zhi, Zheng, Liu, Liu, Bin, Zhang, Feng, Dong, Lin, Tian, Lixin, Shen, Zhanwei, Wang, Jinze, Huang, Yajun, Fan, Zhongchao, Liu, Xingfang, Yan, Guoguo, Zhao, Wanshun, Wang, Lei, Sun, Guosheng, Yang, Fuhua, Zeng, Yiping

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Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching von Wang, Jiulong, Zhao, Siqi, Yan, Guoguo, Shen, Zhanwei, Zhao, Wanshun, Wang, Lei, Liu, Xingfang

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A Novel Silicon Carbide Accumulation Channel Injection Enhanced Gate Transistor With Buried Barrier Under Shielding Region von Wen, Zhengxin, Zhang, Feng, Shen, Zhanwei, Tian, Lixin, Yan, Guoguo, Liu, Xingfang, Wang, Lei, Zhao, Wanshun, Sun, Guosheng, Zeng, Yiping

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Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC von Zhang, Feng, Sun, Guosheng, Zheng, Liu, Liu, Shengbei, Liu, Bin, Dong, Lin, Wang, Lei, Zhao, Wanshun, Liu, Xingfang, Yan, Guoguo, Tian, Lixin, Zeng, Yiping

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Atomic Layer Deposition of BiFeO3 Thin Films Using β‑Diketonates and H2O von Zhang, Feng, Sun, Guosheng, Zhao, Wanshun, Wang, Lei, Zheng, Liu, Liu, Shengbei, Liu, Bin, Dong, Lin, Liu, Xingfang, Yan, Guoguo, Tian, Lixin, Zeng, Yiping

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Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates von Dong, Lin, Sun, Guosheng, Yu, Jun, Zheng, Liu, Liu, Xingfang, Zhang, Feng, Yan, Guoguo, Li, Xiguang, Wang, Zhanguo

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Prediction of high-density and high-mobility two-dimensional electron gas at AlxGa1−xN/4H-SiC interface von Zhanwei Shen, Feng Zhang, Dimitrijev, Sima, Jisheng Han, Lixin Tian, Guoguo Yan, Zhengxin Wen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng

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Analysis and modeling of localized faceting on 4H-SiC epilayer surfaces von Dong, Lin, Sun, Guosheng, Zheng, Liu, Liu, Xingfang, Zhang, Feng, Yan, Guoguo, Tian, Lixin, Li, Xiguang, Wang, Zhanguo

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Chloride-based fast homoepitaxial growth of 4H-SiC films in a vertical hot-wall CVD von 闫果果 张峰 钮应喜 杨霏 刘兴昉 王雷 赵万顺 孙国胜 曾一平

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15158A SP6T RF switch based on IBM SOI CMOS technology von 程知群 颜国国 倪文华 朱丹丹 徐文华 李进 陈帅 刘国华

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Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001)/SiO2 interface von Zheng, Liu, Sun, Guosheng, Zhang, Feng, Liu, Shengbei, Liu, Bin, Dong, Lin, Wang, Lei, Zhao, Wanshun, Liu, Xingfang, Yan, Guoguo, Tian, Lixin, Zeng, Yiping

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Vertical multilayer structure of MoS2 flakes prepared by thermal evaporative deposition von Zhao, Siqi, Li, Yunkai, Wei, Moyu, Jiao, Jingyi, Yan, Guoguo, Liu, Xingfang

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High-Performance 4H―SiC-Based Metal―Insulator―Semiconductor Ultraviolet Photodetectors With SiO2 and Al2O3/SiO2 Films von FENG ZHANG, GUOSHENG SUN, YIPING ZENG, HUOLIN HUANG, ZHENGYUN WU, LEI WANG, WANSHUN ZHAO, XINGFANG LIU, GUOGUO YAN, LIU ZHENG, LIN DONG

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Ultrahigh growth rate-induced thick 3C-SiC heteroepitaxial layers on 4H-SiC and its oxidation characteristics von Jingyi, Jiao, Zhao, Siqi, Li, Yunkai, Wei, Moyu, Yan, Guoguo, Liu, Xingfang

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Growth behavior of cristobalite SiO2 coating on 4H–SiC surface via high-temperature oxidation von Wei, Moyu, Zhao, Siqi, Li, Yunkai, Jiao, Jingyi, Yan, Guoguo, Liu, Xingfang

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Selective removal of 4H-SiC porous structures caused by photoelectric chemical etching via post oxidation annealing von Li, Yunkai, Zhao, Siqi, Yang, Shangyu, Guo, Ning, Yuan, Weilong, Pei, Yicheng, Yan, Guoguo, Liu, Xingfang

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Preparation and oxidation characteristics of Si layers grown on 4H–SiC substrates von Li, Yunkai, Zhao, Siqi, Wei, Moyu, Jiao, Jingyi, Yan, Guoguo, Liu, Xingfang

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