A CCCS-Based Approach to Modeling of Thermal Coupling von Li, Yiao, Niu, Guofu

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Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications von Jia, Xiaojia, Niu, Guofu

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Effect of Boundary Conditions on Thermal Noise of Intrinsic Terminal Currents in Bipolar Transistors Pertinent to Quasi-Ballistic Transport von Xia, Kejun, Niu, Guofu

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A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration von Xiaoyun Wei, Guofu Niu, Sweeney, S., Qingqing Liang, Xudong Wang, Taylor, S.

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A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling von Xia, Kejun, Niu, Guofu, Xu, Ziyan

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An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs von Sutton, A.K., Bellini, M., Cressler, J.D., Pellish, J.A., Reed, R.A., Marshall, P.W., Guofu Niu, Vizkelethy, G., Turowski, M., Raman, A.

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Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K von Lan Luo, Guofu Niu, Moen, K.A., Cressler, J.D.

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Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling von Xia, Kejun, Niu, Guofu

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Improved Compact Modeling of Recovery From Saturation in SiGe HBTs von Li, Yiao, Niu, Guofu, Chen, Wei

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Discussions and extension of van Vliet’s noise model for high speed bipolar transistors von Xia, Kejun, Niu, Guofu

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Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs von Appaswamy, A., Bellini, M., Wei-Min Lance Kuo, Peng Cheng, Jiahui Yuan, Chendong Zhu, Cressler, J.D., Guofu Niu, Joseph, A.J.

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Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit von Kejun Xia, Guofu Niu, Sheridan, D.C., Sweeney, S.L.

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An Investigation of Negative Differential Resistance and Novel Collector-Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures von Yuan, Jiahui, Cressler, John D., Zhu, Chendong, Cui, Yan, Niu, Guofu, Liang, Qingqing, Joseph, Alvin J.

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Characterization of LDMOS down to cryogenic temperatures and modeling with PSPHV von Wang, Yili, Xia, Kejun, Niu, Guofu, Hamilton, Michael, Cheng, Xu

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Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs von Guofu Niu, Jin Tang, Zhiming Feng, Joseph, A.J., Harame, D.L.

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Modeling of anomalous frequency and bias dependences of effective gate resistance in RF CMOS von Cui, Y., Guofu Niu, Taylor, S.S.

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Autonomous bit error rate testing at multi-gbit/s rates implemented in a 5AM SiGe circuit for radiation effects self test (CREST) von Marshall, P., Carts, M., Currie, S., Reed, R., Randall, B., Fritz, K., Kennedy, K., Berg, M., Krithivasan, R., Siedleck, C., Ladbury, R., Marshall, C., Cressler, J., Guofu Niu, LaBel, K., Gilbert, B.

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Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs von Turowski, W, Pellish, J A, Moen, K A, Raman, A, Cressler, J D, Reed, R A, Guofu Niu

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Improved Nonlinear Self-Heating Compact Modeling in SiGe HBTs Using Mextram von Zhang, Anni, Niu, Guofu, Li, Yiao, Willemsen, Marnix, Scholten, Andries

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Modeling and Characterization of Intermodulation Linearity on a 90-nm RF CMOS Technology von Xiaoyun Wei, Guofu Niu, Ying Li, Ming-Ta Yang, Taylor, S.S.

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