Capacitance, conductance, and dielectric characteristics of Al/TiO2/Si diode von Gullu, H. H., Yildiz, D. E.

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Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin film von Gullu, H. H., Yildiz, D. E.

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Analysis of forward and reverse biased current–voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer von Gullu, H. H., Yildiz, D. E.

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Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application von Gullu, H.H., Yildiz, D.E., Kocyigit, A., Yıldırım, M.

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Novel Al/CoFe/p-Si and Al/NiFe/p-Si MS-type photodiode for sensing von Yıldız, D E, Gullu, H H, Yıldırım, M, Morley, N A, Sahingoz, R

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A study on electrical properties of Au/4H-SiC Schottky diode under illumination von Yıldız, D. E., Karadeniz, S., Gullu, H. H.

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Dibenzosuberenone-based non-enzymatic electrochemical sensors von Gullu, H. H., Yildiz, D. E., Tasaltin, N., Baris, B.

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Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode von Gullu, H. H., Yildiz, D. E., Surucu, O., Parlak, M.

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Electrical Characterization of ZnInSe2/Cu0.5Ag0.5InSe2 Thin-Film Heterojunction von Gullu, H. H., Parlak, M.

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Electrical characteristics of organic heterojunction with an alternating benzotriazole and fluorene containing copolymer von Gullu, H. H., Yildiz, D. E., Toppare, L., Cirpan, A.

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Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface von Gullu, H. H., Yıldız, D. E., Yıldırım, M., Demir, I., Altuntas, I.

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Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals von Yildiz, D. E., Gullu, H. H., Sarilmaz, A., Ozel, F., Kocyigit, A., Yildirim, M.

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Electrical characterization of CdZnTe/Si diode structure von Balbasi, C. Dogru, Terlemezoglu, M., Gullu, H. H., Yildiz, D. E., Parlak, M.

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Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode von Gullu, H. H., Seme Sirin, D., Yıldız, D. E.

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Dark conduction mechanisms of PTQBDT based heterojunction diode von Gullu, H H, Yıldız, D E, Hacioglu, S O, Cirpan, A, Toppare, L

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Effect of TiO2 Thin Film with Different Dopants in Bringing Au-Metal into a Contact with n-Si von Yıldız, D. E., Gullu, H. H., Cavus, H. Kanbur

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Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend von Yıldız, D. E., Gullu, H. H., Toppare, L., Cirpan, A.

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Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode von Yigiterol, F., Güllü, H. H., Bayraklı, Ö., Yıldız, D. E.

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Dark and illuminated electrical characteristics of Schottky device with Zn-complex interface layer von Karadeniz, S., Yıldız, D. E., Gullu, H. H., Kose, D. A., Hussaini, A. A., Yıldırım, M.

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Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes von Sürücü, Ö.Bayraklı, Güllü, H.H., Terlemezoglu, M., Yildiz, D.E., Parlak, M.

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