Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μm up to 180 K von Reboud, V., Gassenq, A., Pauc, N., Aubin, J., Milord, L., Thai, Q. M., Bertrand, M., Guilloy, K., Rouchon, D., Rothman, J., Zabel, T., Armand Pilon, F., Sigg, H., Chelnokov, A., Hartmann, J. M., Calvo, V.

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Raman spectral shift versus strain and composition in GeSn layers with 6%–15% Sn content von Gassenq, A., Milord, L., Aubin, J., Pauc, N., Guilloy, K., Rothman, J., Rouchon, D., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.

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1.9% bi-axial tensile strain in thick germanium suspended membranes fabricated in optical germanium-on-insulator substrates for laser applications von Gassenq, A., Guilloy, K., Osvaldo Dias, G., Pauc, N., Rouchon, D., Hartmann, J.-M., Widiez, J., Tardif, S., Rieutord, F., Escalante, J., Duchemin, I., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Reboud, V., Calvo, V.

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Gamma bandgap determination in pseudomorphic GeSn layers grown on Ge with up to 15% Sn content von Gassenq, A., Milord, L., Aubin, J., Guilloy, K., Tardif, S., Pauc, N., Rothman, J., Chelnokov, A., Hartmann, J. M., Reboud, V., Calvo, V.

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ and biaxial (001) stress von Gassenq, A., Tardif, S., Guilloy, K., Duchemin, I., Pauc, N., Hartmann, J. M., Rouchon, D., Widiez, J., Niquet, Y. M., Milord, L., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.

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Accurate strain measurements in highly strained Ge microbridges von Gassenq, A., Tardif, S., Guilloy, K., Osvaldo Dias, G., Pauc, N., Duchemin, I., Rouchon, D., Hartmann, J.-M., Widiez, J., Escalante, J., Niquet, Y.-M., Geiger, R., Zabel, T., Sigg, H., Faist, J., Chelnokov, A., Rieutord, F., Reboud, V., Calvo, V.

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Germanium based photonic components toward a full silicon/germanium photonic platform von Reboud, V., Gassenq, A., Hartmann, J.M., Widiez, J., Virot, L., Aubin, J., Guilloy, K., Tardif, S., Fédéli, J.M., Pauc, N., Chelnokov, A., Calvo, V.

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Uniform phosphorus doping of untapered germanium nanowires von Guilloy, K, Pauc, N, Gentile, P, Robin, E, Calvo, V

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Study of the light emission in Ge layers and strained membranes on Si substrates von Gassenq, A., Guilloy, K., Pauc, N., Hartmann, J.-M., Osvaldo Dias, G., Rouchon, D., Tardif, S., Escalante, J., Duchemin, I., Niquet, Y.-M., Chelnokov, A., Reboud, V., Calvo, Vincent

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Structural and electronic properties of in-situ phosphorous-doped Ge layers grown by reduced pressure-chemical vapour deposition von Hartmann, J.M., Benevent, V., Reboud, V., Chelnokov, A., Guilloy, K., Pauc, N., Calvo, V.

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Highly strained Ge micro-blocks bonded on Si platform for mid-infrared photonic applications von Gassenq, A., Guilloy, K., Pauc, N., Rouchon, D., Widiez, J., Rothman, J., Hartmann, J.-M., Chelnokov, A., Reboud, V., Calvo, V.

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Raman-strain relations in highly strained Ge: Uniaxial ⟨100⟩, ⟨110⟩ andbiaxial (001) stress von Gassenq, A, Tardif, S, Guilloy, K, Duchemin, I, Pauc, N, Hartmann, J M, Rouchon, D, Widiez, J, Niquet, Y M, Milord, L, Zabel, T, Sigg, H, Faist, J, Chelnokov, A, Rieutord, F, Reboud, V, Calvo, V

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Raman spectral shift versus strain and composition in GeSn layers with: 6 to 15% Sn contents von Gassenq, A, Milord, L, Aubin, J, Pauc, N, Guilloy, K, Rothman, J, Rouchon, D, Chelnokov, A, Hartmann, J M, Reboud, V, Calvo, V

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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain von Guilloy, K, Pauc, N, Gassenq, A, Niquet, Y. M, Escalante, J. M, Duchemin, I, Tardif, S, Dias, G. Osvaldo, Rouchon, D, Widiez, J, Hartmann, J. M, Geiger, R, Zabel, T, Sigg, H, Faist, J, Chelnokov, A, Reboud, V, Calvo, V

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Optically pumped GeSn micro-disks with 16 % Sn lasing at 3.1 um up to 180K von Reboud, V, Gassenq, A, Pauc, N, Aubin, J, Milord, L, Thai, Q M, Bertrand, M, Guilloy, K, Rouchon, D, Rothman, J, Zabel, T, F Armand Pilon, Sigg, H, Chelnokov, A, Hartmann, J M, Calvo, V

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Accurate strain measurements in highly strained Ge microbridges von Gassenq, A, Tardif, S, Guilloy, K, Dias, G Osvaldo, Pauc, N, Duchemin, I, Rouchon, D, J-M Hartmann, Widiez, J, Escalante, J, Y-M Niquet, Geiger, R, Zabel, T, Sigg, H, Faist, J, Chelnokov, A, Rieutord, F, Reboud, V, Calvo, V

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Uniaxially stressed germanium with fundamental direct band gap von Geiger, R, Zabel, T, Marin, E, Gassenq, A, Hartmann, J. -M, Widiez, J, Escalante, J, Guilloy, K, Pauc, N, Rouchon, D, Diaz, G. Osvaldo, Tardif, S, Rieutord, F, Duchemin, I, Niquet, Y. -M, Reboud, V, Calvo, V, Chelnokov, A, Faist, J, Sigg, H

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Germanium under high tensile stress: nonlinear dependence of direct band gap vs. strain von Guilloy, K, Pauc, N, Gassenq, A, Niquet, Y M, Escalante, J M, Duchemin, I, Tardif, S, Dias, G Osvaldo, Rouchon, D, Widiez, J, Hartmann, J M, Geiger, R, Zabel, T, Sigg, H, Faist, J, Chelnokov, A, Reboud, V, Calvo, V

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Uniaxially stressed germanium with fundamental direct band gap von Geiger, R, Zabel, T, Marin, E, Gassenq, A, J -M Hartmann, Widiez, J, Escalante, J, Guilloy, K, Pauc, N, Rouchon, D, Diaz, G Osvaldo, Tardif, S, Rieutord, F, Duchemin, I, Y -M Niquet, Reboud, V, Calvo, V, Chelnokov, A, Faist, J, Sigg, H

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Electron–phonon coupling in single-layer MoS2 von Mahatha, Sanjoy K., Ngankeu, Arlette S., Hinsche, Nicki Frank, Mertig, Ingrid, Guilloy, Kevin, Matzen, Peter L., Bianchi, Marco, Sanders, Charlotte E., Miwa, Jill A., Bana, Harsh, Travaglia, Elisabetta, Lacovig, Paolo, Bignardi, Luca, Lizzit, Daniel, Larciprete, Rosanna, Baraldi, Alessandro, Lizzit, Silvano, Hofmann, Philip

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