Non-linear impedance spectroscopy for complete thermoelectric characterization: Beyond the zT estimation von Thiébaut, E., Pesty, F., Goupil, C., Guegan, G., Lecoeur, P.

Volltext

Systematic tuning of the conduction mechanisms in ferroelectric thin films von Levasseur, D, Bouyssou, E, De Paolis, R, Rousseau, A, Coccetti, F, Guegan, G, Payan, S, Maglione, M

Volltext

Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol–gel BaxSr1−xTiO3 thin films von Levasseur, D., El-Shaarawi, H.B., Pacchini, S., Rousseau, A., Payan, S., Guegan, G., Maglione, M.

Volltext

Maximization of the Thermoelectric Cooling of a Graded Peltier Device by Analytical Heat-Equation Resolution von Thiébaut, E., Goupil, C., Pesty, F., D’Angelo, Y., Guegan, G., Lecoeur, P.

Volltext

Synthesis, sintering, and thermoelectric properties of the solid solution La1–x Sr x CoO3±δ (0 ≤ x ≤ 1) von Bousnina, M A, Dujardin, R, Perriere, L, Giovannelli, F, Guegan, G, Delorme, F

Volltext

Low temperature dielectric relaxation and charged defects in ferroelectric thin films von Artemenko, A., Payan, S., Rousseau, A., Levasseur, D., Arveux, E., Guegan, G., Maglione, M.

Volltext

DIELECTRIC PROPERTIES AT MICROWAVES FREQUENCIES OF (Ni, Ti, La, Mg)-DOPED Ba0.3Sr0.7TiO3 THIN FILMS DEPOSITED ON HIGH-RESISTIVITY SILICON SUBSTRATES von Ponchel, F, Remiens, D, Midy, J, Legier, J-F, Soyer, C, Lasri, T, Guegan, G

Volltext

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices von Bertrand, G., Deleonibus, S., Previtali, B., Guegan, G., Jehl, X., Sanquer, M., Balestra, F.

Volltext

Wafer level reliability and leakage current modeling of PZT capacitors von Bouyssou, E., Jérisian, R., Cézac, N., Leduc, P., Guégan, G., Anceau, C.

Volltext

Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances von Jehl, X., Sanquer, M., Bertrand, G., Guegan, G., Deleonibus, S., Fraboulet, D.

Volltext

Three level charge pumping on a single interface trap von Militaru, L., Masson, P., Guegan, G.

Volltext

Leakage current conduction in IrO2/PZT/Pt structures von Bouyssou, E, Leduc, P, Guégan, G, Jérisian, R

Volltext

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets von Deleonibus, S., Caillat, C., Guegan, G., Heitzmann, M., Nier, M.E., Tedesco, S., Dal'zotto, B., Martin, F., Mur, P., Papon, A.M., Lecarval, G., Biswas, S., Souil, D.

Volltext

Synthesis, sintering, and thermoelectric properties of the solid solution La1–xSrxCoO3±δ (0 ≤ x ≤ 1) von Bousnina, M. A., Dujardin, R., Perriere, L., Giovannelli, F., Guegan, G., Delorme, F.

Volltext

Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS von Fadlallah, M., Ghibaudo, G., Jomaah, J., Guégan, G.

Volltext

On the extraction of the channel current in permeable gate oxide MOSFETs von Palestri, P., Esseni, D., Guegan, G.

Volltext

Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology von Munteanu, D, Le Carval, G, Guegan, G

Volltext

A methodology to extract the channel current of permeable gate oxide MOSFETs von Palestri, P., Esseni, D., Selmi, L., Guegan, G., Sangiorgi, E.

Volltext

Static and low frequency noise characterization of surface- and buried-mode 0.1 μm P and N MOSFETs von Fadlallah, M, Ghibaudo, G, Jomaah, J, Zoaeter, M, Guegan, G

Volltext

Synthesis, sintering, and thermoelectric properties of the solid solution La1–xSr x CoO3±δ (0 ≤ x ≤ 1) von Bousnina, M. A., Dujardin, R., Perriere, L., Giovannelli, F., Guegan, G., Delorme, F.

Volltext