X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling von Jeong, Junhyung, Cho, Kyujun, Ji, Honggu, Chang, Woojin, Lee, Jongmin, Min, Byoung‐gue, Kang, Dongmin

Volltext

Improved RF Performances by Applying Asymmetric Passivation and Air-Bridged Field Plate in AlGaN/GaN HEMTs With Reliability-Based Simulation von Choi, Jun-Hyeok, Kim, Dohyung, Lee, Seo-Jun, Kim, Ji-Hun, Cho, Yoon-A, Min, Byoung-Gue, Kang, Dong Min, Kim, Hyun-Seok

Volltext

Optimized recess etching criteria for T‐gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel von Park, Jong Yul, Min, Byoung‐Gue, Lee, Jong‐Min, Chang, Woojin, Kang, Dong Min, Jang, E‐San, Kim, Junhyung, Kim, Jeong‐Gil

Volltext

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process von Min, Byoung‐Gue, Lee, Jong‐Min, Yoon, Hyung Sup, Chang, Woo‐Jin, Park, Jong‐Yul, Kang, Dong Min, Chang, Sung‐Jae, Jung, Hyun‐Wook

Volltext

A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices von Min, Byoung-Gue, Chang, Sung-Jae, Jung, Hyun-Wook, Yoon, Hyung Sup, Lee, Jong-Min, Jang, Woo-Jin, Kang, Dong-Min

Volltext

W‐Band MMIC chipset in 0.1‐μm mHEMT technology von Lee, Jong‐Min, Chang, Woo‐Jin, Kang, Dong Min, Min, Byoung‐Gue, Yoon, Hyung Sup, Chang, Sung‐Jae, Jung, Hyun‐Wook, Kim, Wansik, Jung, Jooyong, Kim, Jongpil, Seo, Mihui, Kim, Sosu

Volltext

Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study von Kang, Woo-Seok, Choi, Jun-Hyeok, Kim, Dohyung, Kim, Ji-Hun, Lee, Jun-Ho, Min, Byoung-Gue, Kang, Dong Min, Choi, Jung Han, Kim, Hyun-Seok

Volltext

Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study von Lee, Jun-Ho, Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Min, Byoung-Gue, Kang, Dong Min, Choi, Jung Han, Kim, Hyun-Seok

Volltext

Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study von Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Kim, Ji-Hun, Lee, Jun-Ho, Kim, Kyeong-Yong, Min, Byoung-Gue, Kang, Dong Min, Kim, Hyun-Seok

Volltext

High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors von Lee, Jong-Min, Min, Byoung-Gue, Ju, Cheol-Won, Ahn, Ho-Kyun, Lim, Jong-Won

Volltext

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors von Do, Jae-Won, Jung, Hyun-Wook, Shin, Min Jeong, Ahn, Ho-Kyun, Kim, Haecheon, Kim, Ryun-Hwi, Cho, Kyu Jun, Chang, Sung-Jae, Min, Byoung-Gue, Yoon, Hyung Sup, Kim, Ji-Heon, Yang, Jin-Mo, Lee, Jung-Hee, Lim, Jong-Won

Volltext

The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors von Kim, Junhyung, Lee, Gyejung, Cho, Kyujun, Park, Jong Yul, Min, Byoung-Gue, Jeong, Junhyung, Ji, Hong-Gu, Chang, Woojin, Lee, Jong-Min, Kang, Dong-Min

Volltext

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment von Lim, Jong-Won, Ahn, Ho-Kyun, Kim, Seong-il, Kang, Dong-Min, Lee, Jong-Min, Min, Byoung-Gue, Lee, Sang-Heung, Yoon, Hyung-Sup, Ju, Chull-Won, Kim, Haecheon, Mun, Jae-Kyoung, Nam, Eun-Soo, Park, Hyung-Moo

Volltext

Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistors with Various Dielectric Passivation Structures for High-Power and High-Frequency Operations: A Simulatio... von Kim, Ji-Hun, Lim, Chae-Yun, Lee, Jae-Hun, Choi, Jun-Hyeok, Min, Byoung-Gue, Kang, Dong Min, Kim, Hyun-Seok

Volltext

A Study on Scale Determination of FO-RO Hybrid Process Based on FO Recovery Rate von Kim, Geon-Youb, Jeong, Jun-Won, Kim, Min-Gue, Kim, Hyung-Soo, Kim, Ji-Hoon, Kim, Hyung-Sook

Volltext

Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing von Yoon, Hyung Sup, Min, Byoung-Gue, Lee, Jong Min, Kang, Dong Min, Ahn, Ho Kyun, Cho, Kyu-Jun, Do, Jae-Won, Shin, Min Jeong, Jung, Hyun-Wook, Kim, Sung Il, Kim, Hae Cheon, Lim, Jong Won

Volltext

Microwave Low-Noise Performance of 0.17~\mu \text Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate von Yoon, Hyung Sup, Min, Byoung-Gue, Lee, Jong Min, Kang, Dong Min, Ahn, Ho-Kyun, Kim, Haecheon, Lim, Jongwon

Volltext

Effect of Fluoride‐based Plasma Treatment on the Performance of AlGaN/GaN MISHFET von Ahn, Ho‐Kyun, Kim, Hae‐Cheon, Kang, Dong‐Min, Kim, Sung‐Il, Lee, Jong‐Min, Lee, Sang‐Heung, Min, Byoung‐Gue, Yoon, Hyoung‐Sup, Kim, Dong‐Young, Lim, Jong‐Won, Kwon, Yong‐Hwan, Nam, Eun‐Soo, Park, Hyoung‐Moo, Lee, Jung‐Hee

Volltext

Pretreatment strategies for mitigation of membrane fouling by effluent organic matter in ultrafiltration: ozonation and coagulation/flocculation von Kim, Geon-Youb, Kim, Ji-Hoon, Kim, Min-Gue, Kim, Hyung-Soo, Kim, Hyung-Sook, Chang, Won-Seok

Volltext

Fascial Free Flap for Reconstruction of the Dorsolateral Hand and Digits: The Advantage of a Thin Contour von Lee, Min Gue, Kim, Jin Soo, Lee, Dong Chul, Roh, Si Young, Lee, Kyung Jin, Choi, Byeong Kyoo

Volltext