Non-linear impedance spectroscopy for complete thermoelectric characterization: Beyond the zT estimation von Thiébaut, E., Pesty, F., Goupil, C., Guegan, G., Lecoeur, P.

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Systematic tuning of the conduction mechanisms in ferroelectric thin films von Levasseur, D, Bouyssou, E, De Paolis, R, Rousseau, A, Coccetti, F, Guegan, G, Payan, S, Maglione, M

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Systematic investigation of the annealing temperature and composition effects on the dielectric properties of sol–gel BaxSr1−xTiO3 thin films von Levasseur, D., El-Shaarawi, H.B., Pacchini, S., Rousseau, A., Payan, S., Guegan, G., Maglione, M.

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Maximization of the Thermoelectric Cooling of a Graded Peltier Device by Analytical Heat-Equation Resolution von Thiébaut, E., Goupil, C., Pesty, F., D’Angelo, Y., Guegan, G., Lecoeur, P.

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Synthesis, sintering, and thermoelectric properties of the solid solution La1–x Sr x CoO3±δ (0 ≤ x ≤ 1) von Bousnina, M A, Dujardin, R, Perriere, L, Giovannelli, F, Guegan, G, Delorme, F

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Low temperature dielectric relaxation and charged defects in ferroelectric thin films von Artemenko, A., Payan, S., Rousseau, A., Levasseur, D., Arveux, E., Guegan, G., Maglione, M.

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Capacitance–Voltage (C–V) characterization of 20 Å thick gate oxide: parameter extraction and modeling von Clerc, R, Devoivre, T, Ghibaudo, G, Caillat, C, Guégan, G, Reimbold, G, Pananakakis, G

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Wafer level reliability and leakage current modeling of PZT capacitors von Bouyssou, E., Jérisian, R., Cézac, N., Leduc, P., Guégan, G., Anceau, C.

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Leakage current conduction in IrO2/PZT/Pt structures von Bouyssou, E, Leduc, P, Guégan, G, Jérisian, R

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Extended Reliability Study of High Density PZT Capacitors: Intrinsic Lifetime Determination and Wafer Level Screening Strategy von Bouyssou, E., Guegan, G., Bruyere, S., Pezzani, R., Berneux, L., de Morais, L. Dantas, Rebrasse, J.-P., Anceau, C., Nopper, C.

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DIELECTRIC PROPERTIES AT MICROWAVES FREQUENCIES OF (Ni, Ti, La, Mg)-DOPED Ba0.3Sr0.7TiO3 THIN FILMS DEPOSITED ON HIGH-RESISTIVITY SILICON SUBSTRATES von Ponchel, F, Remiens, D, Midy, J, Legier, J-F, Soyer, C, Lasri, T, Guegan, G

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Silicon single electron transistors with SOI and MOSFET structures: the role of access resistances von Jehl, X., Sanquer, M., Bertrand, G., Guegan, G., Deleonibus, S., Fraboulet, D.

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Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS von Fadlallah, M., Ghibaudo, G., Jomaah, J., Guégan, G.

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Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices von Bertrand, G., Deleonibus, S., Previtali, B., Guegan, G., Jehl, X., Sanquer, M., Balestra, F.

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Impact of gate tunneling leakage on the operation of NMOS transistors with ultra-thin gate oxides von LIME, F, CLERC, R, GHIBAUDO, G, PANANAKAKIS, G, GUEGAN, G

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Low frequency noise characterization of 0.25 μm Si CMOS transistors von Boutchacha, T., Ghibaudo, G., Guégan, G., Haond, M.

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Signature of Kondo effect in silicon quantum dots von Specht, M., Sanquer, M., Deleonibus, S., Guégan, G.

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Stress induced leakage current at low field in ultra thin oxides von Lime, F., Ghibauda, G., Guégan, G.

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Three level charge pumping on a single interface trap von Militaru, L., Masson, P., Guegan, G.

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High resolution transport spectroscopy in ultimate MOSFETs at very low temperature von Sanquer, M., Jehl, X., Specht, M., Bertrand, G., Guégan, G., Deleonibus, S.

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