A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures von Jiang, Xixi, Shi, Xinyao, Zhang, Min, Wang, Yarong, Gu, Zhenghao, Chen, Lin, Zhu, Hao, Zhang, Kai, Sun, Qingqing, Zhang, David Wei

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Floquet spectrum and transport through an irradiated graphene ribbon von Gu, Zhenghao, Fertig, H A, Arovas, Daniel P, Auerbach, Assa

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Interfacial traps and mobile ions induced flatband voltage instability in 4H-SiC MOS capacitors under bias temperature stress von Yang, Chao, Gu, Zhenghao, Yin, Zhipeng, Qin, Fuwen, Wang, Dejun

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Performance improvement in p-Type WS2field-effect transistors with 1T phase contacts von Yang, Yafen, Li, Han, Gu, Zhenghao, Chen, Lin, Zhu, Hao, Ji, Li, Sun, Qingqing

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Performance improvement in p-Type WS 2 field-effect transistors with 1T phase contacts von Yang, Yafen, Li, Han, Gu, Zhenghao, Chen, Lin, Zhu, Hao, Ji, Li, Sun, Qingqing

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Multi-Objective Optimization of Economy, Safety and Emissions for the Startup Scheduling of a Steam Turbine von Chen, Jianhong, Hu, Ziwei, Li, Wei, Mao, Zhiwei, Wu, Wenjian, Gu, Zhenghao

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Performance improvement in p-Type WS2 field-effect transistors with 1T phase contacts von Yang, Yafen, Li, Han, Gu, Zhenghao, Chen, Lin, Zhu, Hao, Ji, Li, Sun, Qingqing

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Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS2 Thin Films Prepared by Atomic Layer Deposition von Zhang, Tianbao, Cao, Yuanyuan, Gu, Zhenghao, Zhu, Hao, Chen, Lin, Sun, Qingqing, Zhang, David Wei

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Fabrication of diamond/AlSi10Mg composite using SLM: Effects of processing parameters and pre−/post-treatments von Wang, Yuxuan, Hao, Menglong, Wang, Jialong, Li, Menglin, Gu, Zhenghao, Meng, Chenyu, Deng, Renming, Sun, Yiwei

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MoS2‑on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering von Gu, Zhenghao, Zhang, Tianbao, Luo, Jiangliu, Wang, Yang, Liu, Hao, Chen, Lin, Liu, Xinke, Yu, Wenjie, Zhu, Hao, Sun, Qing-Qing, Zhang, David Wei

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Channel-protecting fabrication of top-gate MoS2 transistor arrays von Gu, Zhenghao, Liu, Hao, Wang, Yang, Zhu, Hao, Chen, Lin, Sun, Qingqing, Zhang, David Wei

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Multifunctional Logic‐in‐Memory Cell Based on Wafer‐Scale MoS 2 Thin Films Prepared by Atomic Layer Deposition von Zhang, Tianbao, Cao, Yuanyuan, Gu, Zhenghao, Zhu, Hao, Chen, Lin, Sun, Qingqing, Zhang, David Wei

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Double-side fabrication process and millimeter wave response of intrinsic Josephson junctions von Wu, JingBo, Yi, DongChao, Gu, ZhengHao, Kang, Lin, Xu, WeiWei, Chen, Jian, Wu, PeiHeng

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Channel-protecting fabrication of top-gate MoS 2 transistor arrays von Gu, Zhenghao, Liu, Hao, Wang, Yang, Zhu, Hao, Chen, Lin, Sun, Qingqing, Zhang, David Wei

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MoS 2 -on-AlN Enables High-Performance MoS 2 Field-Effect Transistors through Strain Engineering von Gu, Zhenghao, Zhang, Tianbao, Luo, Jiangliu, Wang, Yang, Liu, Hao, Chen, Lin, Liu, Xinke, Yu, Wenjie, Zhu, Hao, Sun, Qing-Qing, Zhang, David Wei

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A Symmetric Tunnel Field-Effect Transistor Based on MoS 2 /Black Phosphorus/MoS 2 Nanolayered Heterostructures von Jiang, Xixi, Shi, Xinyao, Zhang, Min, Wang, Yarong, Gu, Zhenghao, Chen, Lin, Zhu, Hao, Zhang, Kai, Sun, Qingqing, Zhang, David Wei

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汽轮机中压调节阀参与电力系统低频振荡的原因分析及预防措施 von 张宝, 李必正, 王异成, 顾正皓, 鲍文龙, 樊印龙

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630 MW机组低压末级长叶片水蚀分析及预防 von 王维英, 李卫军, 冯立国, 顾正皓, 干忠明, 马思聪

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浙江省火力发电机组非计划停运统计及预防 von 胡洲, 应光耀, 余斌, 李卫军, 顾正皓

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ALD-Based Synthesis of Wafer-Scale Transition Metal Dichalcogenides Towards Nanoelectronics and Optoelectronics Applications von Zhu, Hao, Liu, Hao, Wang, Yang, Gu, Zhenghao, Zhang, Kai, Zhu, Xinyi, Chen, Lin, Sun, Qingqing

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