Terahertz spectroscopy of plasma waves in high electron mobility transistors von Nouvel, P., Marinchio, H., Torres, J., Palermo, C., Gasquet, D., Chusseau, L., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V

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Investigation of high-frequency small-signal characteristics of FETs/HEMTs von Starikov, E, Shiktorov, P, Gru inskis, V

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Monte Carlo Simulation of THz Radiation Detection in GaN MOSFET n+nn+ Channel with Uncentered Gate in n-region von Palermo, C., Torres, J., Varani, L., Gružinskis, V., Starikov, E., Shiktorov, P., Ašmontas, S., Sužiedelis, A.

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Effect of gate-length shortening on the terahertz small-signal and self-oscillations characteristics of field-effect transistors von Starikov, E., Shiktorov, P., Gružinskis, V., Marinchio, H., Palermo, C., Varani, L.

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Stepped Current-Voltage Relation and THz Oscillations in GaN MOSFET Due to Optical Phonon Emission: Monte Carlo simulation von Gru inskis, V, Shiktorov, P, Starikov, E, Marinchio, H, Palermo, C, Torres, J, Varani, L

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Room-temperature terahertz mixer based on the simultaneous electronic and optical excitations of plasma waves in a field effect transistor von Marinchio, H., Chusseau, L., Torres, J., Nouvel, P., Varani, L., Sabatini, G., Palermo, C., Shiktorov, P., Starikov, E., Gružinskis, V.

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Hydrodynamic modeling of optically excited terahertz plasma oscillations in nanometric field effect transistors von Marinchio, H., Sabatini, G., Palermo, C., Pousset, J., Torres, J., Chusseau, L., Varani, L., Shiktorov, P., Starikov, E., Gružinskis, V.

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Terahertz generation in nitrides due to transit-time resonance assisted by optical phonon emission von Starikov, E, Shiktorov, P, Gružinskis, V, Varani, L, Palermo, C, Millithaler, J-F, Reggiani, L

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Plasma resonances in a gated semiconductor slab of arbitrary thickness von Marinchio, H., Millithaler, J.-F., Palermo, C., Varani, L., Reggiani, L., Shiktorov, P., Starikov, E., Gružinskis, V.

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TeraHertz electronic noise in field-effect transistors von Palermo, C., Marinchio, H., Shiktorov, P., Starikov, E, Gružinskis, V., Mahi, A., Varani, L

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One-dimensional approximation of Poisson equation for the description of multi-gate conducting channels of FETs and HEMTs von Shiktorov, P, Starikov, E, Gružinskis, V, Marinchio, H, Varani, L

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Plasma waves subterahertz optical beating detection and enhancement in long-channel high-electron-mobility transistors: experiments and modeling von Torres, J., Marinchio, H., Nouvel, P., Sabatini, G., Palermo, C., Varani, L., Chusseau, L., Shiktorov, P., Starikov, E., Gruzinskis, V.

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Problems of noise modeling in the presence of total current branching in high electron mobility transistor and field-effect transistor channels von Shiktorov, P, Starikov, E, Gružinskis, V, Varani, L, Sabatini, G, Marinchio, H, Reggiani, L

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Monte Carlo simulation of THz frequency range Gunn effect in InP MOSFET at impact ionization conditions von Asmontas, S, Gružinskis, V, Shiktorov, P, Starikov, E

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Analytical model of high-frequency noise spectrum in Schottky-barrier diodes von Shiktorov, P., Starikov, E., Gruzinskis, V., Reggiani, L., Varani, L., Vaissiere, J.C.

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Monte Carlo Simulation of Noise and THz Generation in InP FET at Excess of Electrons in Channel von Gružinskis, V., Shiktorov, P., Starikov, E.

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Giant enhancement of low-frequency noise as precursor for the onset of a high-frequency instability von Shiktorov, P, Starikov, E, Gruzinskis, V, Varani, L, Reggiani, L

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Room-temperature terahertz spectroscopy of optically excited plasma waves in HEMTs von Nouvel, P, Marinchio, H, Torres, J, Palermo, C, Chusseau, L, Varani, L, Shiktorov, P, Starikov, E, Gružinskis, V

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High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves von Shiktorov, P., Starikov, E., Gružinskis, V., Varani, L., Reggiani, L.

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Electron transport properties of bulk mercury–cadmium–telluride at 77 K von Palermo, C., Varani, L., Vaissière, J.C., Starikov, E., Shiktorov, P., Gružinskis, V., Azaïs, B.

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