High-performance emitter-up/down SiGe HBT's von Burghartz, J.N., Jenkins, K.A., Grutzmacher, D.A., Sedgwick, T.O., Stanis, C.L.

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A UHV STM for in situ characterization of MBE/CVD growth on 4-inch wafers von Leifeld, O., Müller, B., Grützmacher, D.A., Kern, K.

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Stress and pressure effects on a Si/SiGe double-barrier structure studied by magnetotunnelling spectroscopy von Gassot, P., Gennser, Ulf, Symons, D.M., Zaslavsky, A., Grützmacher, D.A., Portal, J.C.

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Uniaxial stress effects on a Si/Si 1− xGe x double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy von Gennser, Ulf, Zaslavsky, A., Grützmacher, D.A., Gassot, P., Portal, J.C.

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Uniaxial stress effects on a Si/Si1−xGex double-barrier resonant tunnelling structure studied by magnetotunnelling spectroscopy von Gennser, Ulf, Zaslavsky, A., Grützmacher, D.A., Gassot, P., Portal, J.C.

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Cyclotron effective mass of holes in strained Si 1− xGe x/Si quantum well structures von Cheng, J.-P., Kesan, V.P., Grützmacher, D.A., Sedgwick, T.O.

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Valence band Landau level mixing and anisotropy in Si 1− xGe x investigated by resonant magnetotunneling von Zaslavsky, A., Grützmacher, D.A., Lin, S.Y., Smith, T.P., Sedgwick, T.O.

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Atomic layer doping for Si von Grützmacher, D.A., Eberl, K., Powell, A.R., Ek, B.A., Sedwick, T.O., Iyer, S.S.

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Cyclotron effective mass of holes in strained Si1-xGex/Si quantum well structures von CHENG, J.-P, KESAN, V. P, GRÜTZMACHER, D. A, SEDGWICK, T. O

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Valence band Landau level mixing and anisotropy in Si1-xGex investigated by resonant magnetotunneling von ZASLAVSKY, A, GRÜTZMACHER, D. A, LIN, S. Y, SMITH, T. P, SEDGWICK, T. O

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Characterization of devices fabricated in films grown at low temperature by atmospheric pressure CVD von Sedgwick, T.O., Kesan, V.P., Agnello, P.D., Grutzmacher, D.A., Nguyen-Ngoc, D., Iyer, S.S., Meyer, D.J., Ferro, A.P.

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Low temperature atmospheric pressure chemical vapor deposition for epitaxial growth of SiGe bipolar transistors von SEDGWICK, T. O, GRÜTZMACHER, D. A

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Effects of trace surface oxidation in low temperature epitaxy grown from dichlorosilane von SEDGWICK, T. O, AGNELLO, P. D, GRÜTZMACHER, D. A

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