Detection and characterization of oxidizing acids in the Atacama Desert using the Mars Oxidation Instrument von Quinn, R.C., Zent, A.P., Grunthaner, F.J., Ehrenfreund, P., Taylor, C.L., Garry, J.R.C.

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Properties of oxidized silicon as determined by angular-dependent X-ray photoelectron spectroscopy von Hill, J.M., Royce, D.G., Fadley, C.S., Wagner, L.F., Grunthaner, F.J.

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Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO2/Si interfaces von Vasquez, R.P., Grunthaner, F.J.

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The Beagle 2 environmental sensors: science goals and instrument description von Towner, M.C., Patel, M.R., Ringrose, T.J., Zarnecki, J.C., Pullan, D., Sims, M.R., Haapanala, S., Harri, A.-M., Polkko, J., Wilson, C.F., Zent, A.P., Quinn, R.C., Grunthaner, F.J., Hecht, M.H., Garry, J.R.C.

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Mars atmospheric oxidant sensor (MAOS): an in-situ heterogeneous chemistry analysis von Zent, A.P., Quinn, R.C., Grunthaner, F.J., Hecht, M.H., Buehler, M.G., McKay, C.P., Ricco, A.J.

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Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy von Grunthaner, P.J., Grunthaner, F.J., Fathauer, R.W., Lin, T.L., Hecht, M.H., Bell, L.D., Kaiser, W.J., Schowengerdt, F.D., Mazur, J.H.

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The Mars Oxidant experiment (MOx) for Mars '96 von McKay, Christopher P., Grunthaner, F.J., Lane, A.L., Herring, M., Bartman, R.K., Ksendzov, A., Manning, C.M., Lamb, J.L., Williams, R.M., Ricco, A.J., Butler, M.A., Murray, B.C., Quinn, R.C., Zent, A.P., Klein, H.P., Levin, G.V.

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Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures von Grunthaner, F. J., Fernandez, R., Lewis, B. F., Yen, M. Y., Lee, T. C., Madhukar, A.

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Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO 2/Si interfaces von Vasquez, R.P., Grunthaner, F.J.

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Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions von Tufts, Bruce J., Casagrande, Louis G., Lewis, Nathan S., Grunthaner, Frank J.

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An XPS study of silicon/noble metal interfaces: Bonding trends and correlations with the Schottky barrier heights von Grunthaner, P.J., Grunthaner, F.J., Madhukar, A.

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Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy von Yen, M.Y., Madhukar, A., Lewis, B.F., Fernandez, R., Eng, L., Grunthaner, F.J.

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Application of maximum-entropy spectral estimation to deconvolution of XPS data von Vasquez, R.P., Klein, J.D., Barton, J.J., Grunthaner, F.J.

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Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO2/Si interfaces von Vasquez, R.P., Grunthaner, F.J.

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Intensity analysis of XPS spectra to determine oxide uniformity: Application to SiO 2/Si interfaces von Vasquez, R.P., Grunthaner, F.J.

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ZnSeGe heterojunction interface states in the energy region of the valence band discontinuity von Margaritondo, G., Cerrina, F., Capasso, C., Patella, F., Perfetti, P., Quaresima, C., Grunthaner, F.J.

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Soft X-ray photoemission with the SSX-100 spectrometer von Hecht, M.H., Grunthaner, F.J., Pate, B.B., Pianetta, P., Engelhardt, M., Jansen, W., Bryson, C.

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LWIR detector arrays based on nipi superlattices von Maserjian, J., Grunthaner, F.J., Elliott, C.T.

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Cross-sectional transmission electron microscopy of GaAs/InAs(100) strain layer modulated structures grown by molecular beam epitaxy von Yen, M.Y., Madhukar, A., Lewis, B.F., Fernandez, R., Eng, L., Grunthaner, F.J.

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