Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy von Growden, Tyler A., Storm, David F., Zhang, Weidong, Brown, Elliott R., Meyer, David J., Fakhimi, Parastou, Berger, Paul R.

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Superior growth, yield, repeatability, and switching performance in GaN-based resonant tunneling diodes von Growden, Tyler A., Storm, David F., Cornuelle, Evan M., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Roussos, Jason A, Cronk, Nicholas, Ruppalt, Laura B., Champlain, James G., Berger, Paul R., Meyer, David J.

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications von Katzer, D. Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Yan, Rusen, Khalsa, Guru, Wright, John, Lang, Andrew C., Growden, Tyler A., Gokhale, Vikrant, Wheeler, Virginia D., Kramer, Alan R., Yater, Joan E., Xing, Huili Grace, Jena, Debdeep, Meyer, David J.

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Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures von Zhang, Weidong, Growden, Tyler A., Berger, Paul R., Storm, David F., Meyer, David J., Brown, Elliott R.

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431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes von Growden, Tyler A., Zhang, Weidong, Brown, Elliott R., Storm, David F., Hansen, Katurah, Fakhimi, Parastou, Meyer, David J., Berger, Paul R.

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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2 von Cornuelle, Evan M., Growden, Tyler A., Storm, David F., Brown, Elliott R., Zhang, Weidong, Downey, Brian P., Gokhale, Vikrant, Ruppalt, Laura B., Champlain, James G., Peri, Prudhvi, McCartney, Martha R., Smith, David J., Meyer, David J., Berger, Paul R.

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Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures von Growden, Tyler A, Zhang, Weidong, Brown, Elliott R, Storm, David F, Meyer, David J, Berger, Paul R

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Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs von Downey, Brian P., Mack, Shawn, Xie, Andy, Katzer, D. Scott, Lang, Andrew C., Champlain, James G., Cao, Yu, Nepal, Neeraj, Growden, Tyler A., Gokhale, Vikrant J., Hardy, Matthew T., Beam, Edward, Lee, Cathy, Meyer, David J.

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930 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes grown on MOCVD GaN-on-sapphire template von Growden, Tyler A., Cornuelle, Evan M., Storm, David F., Zhang, Weidong, Brown, Elliott R., Whitaker, Logan M., Daulton, Jeffrey W., Molnar, Richard, Meyer, David J., Berger, Paul R.

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Experimental determination of quantum-well lifetime effect on large-signal resonant tunneling diode switching time von Growden, Tyler A., Brown, E. R., Zhang, Weidong, Droopad, Ravi, Berger, Paul R.

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Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures von Jin, Eric N., Downey, Brian P., Gokhale, Vikrant J., Roussos, Jason A., Hardy, Matthew T., Growden, Tyler A., Nepal, Neeraj, Katzer, D. Scott, Calame, Jeffrey P., Meyer, David J.

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Epitaxial Growth of ScAlN on (111) Si Via Molecular Beam Epitaxy von Hardy, Matthew T., Lang, Andrew C., Hart, James L., Jin, Eric N., Nepal, Neeraj, Gokhale, Vikrant J., Downey, Brian P., Katzer, D. Scott, Litwin, Peter M., Sales, Maria Gabriela, Growden, Tyler A., Wheeler, Virginia D.

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AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN von Storm, David F., Growden, Tyler A., Zhang, Weidong, Brown, Elliott R., Nepal, Neeraj, Katzer, D. Scott, Hardy, Matthew T., Berger, Paul R., Meyer, David J.

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Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire von Storm, David F., Growden, Tyler A., Cornuelle, Evan M., Peri, Prudhvi R., Osadchy, Thomas, Daulton, Jeffrey W., Zhang, Wei-Dong, Katzer, D. Scott, Hardy, Matthew T., Nepal, Neeraj, Molnar, Richard, Brown, Elliott R., Berger, Paul R., Smith, David J., Meyer, David J.

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Molecular Beam Epitaxy of Transition Metal Nitrides for Superconducting Device Applications von Katzer, D. Scott, Nepal, Neeraj, Hardy, Matthew T., Downey, Brian P., Storm, David F., Jin, Eric N., Yan, Rusen, Khalsa, Guru, Wright, John, Lang, Andrew C., Growden, Tyler A., Gokhale, Vikrant, Wheeler, Virginia D., Kramer, Alan R., Yater, Joan E., Xing, Huili Grace, Jena, Debdeep, Meyer, David J.

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Boron Delta-Doping Dependence on Si/SiGe Resonant Interband Tunneling Diodes Grown by Chemical Vapor Deposition von Ramesh, A., Growden, T. A., Berger, P. R., Loo, R., Vandervorst, W., Douhard, B., Caymax, M.

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Methods for attaining high interband tunneling current in III-Nitrides von Growden, T. A., Krishnamoorthy, S., Nath, D. N., Ramesh, A., Rajan, S., Berger, P. R.

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Infrared light emitters based on interband tunneling in unipolar doped n-type tunneling structures von Berger, Paul, Zhang, Weidong, Brown, Elliott R, Growden, Tyler

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INFRARED LIGHT EMITTERS BASED ON INTERBAND TUNNELING IN UNIPOLAR DOPED N-TYPE TUNNELING STRUCTURES von Berger, Paul, Zhang, Weidong, Brown, Elliott R, Growden, Tyler

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Gallium nitride cross-gap light emitters based on unipolar-doped tunneling structures von Berger, Paul, Zhang, Weidong, Brown, Elliott R, Meyer, David, Growden, Tyler, Storm, David

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