Monolithic GaP green-emitting LED matrix-addressable arrays von Keune, D.L., Craford, M.G., Groves, W.O., Johnson, A.D.

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Radiative recombination mechanisms in GaAsP diodes with and without nitrogen doping von Craford, M. G., Shaw, Roger W., Herzog, A. H., Groves, W. O.

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Vapor phase epitaxial materials for LED applications von Craford, M.G., Groves, W.O.

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Electroluminescence and Electrical Properties of High-Purity Vapor-Grown GaP von Craford, M. G., Groves, W. O., Herzog, A. H., Hill, D. E.

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GaAs-GaAsP Heterostructure Injection Lasers von Craford, M. G., Groves, W. O., Fox, M. J.

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MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER von Holonyak, N., Johnson, M. R., Rossi, J. A., Groves, W. O.

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Effect of oxygen on GaP solar cell characteristics von Epstein, A.S., Groves, W.O., Dowdy, J.

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Behavior of above-gap NN pair states in radiative recombination in GaAs1− x P x : N+ ( x =0.24, 77°K) von Lee, M. H., Holonyak, N., Campbell, J. C., Groves, W. O., Craford, M. G.

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Method for the preparation of inorganic single crystal and polycrystalline electronic materials von Groves, W. O.

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Single thin-active-layer visible-spectrum In/1-x/Ga/x/P/1-z/As/z/ heterostructure lasers von Chin, R, Holonyak, N, Kolbas, R M, Rossi, J A, Keune, D L, Groves, W O

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Single thin-active-layer visible-spectrum In1− x Ga x P1− z As z heterostructure lasers von Chin, R., Holonyak, N., Kolbas, R. M., Rossi, J. A., Keune, D. L., Groves, W. O.

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GaAs1− y P y heterojunction lasers von Chin, R., Holonyak, N., Shichijo, H., Groves, W. O., Keune, D. L., Rossi, J. A.

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Electroluminescence of Diffused GaAs1 − x P x Diodes with Low Donor Concentrations von Herzog, A. H., Groves, W. O., Craford, M. G.

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Limitations of the direct-indirect transition on In1− x Ga x P1− z As z heterojunctions von Holonyak, N., Chin, R., Coleman, J. J., Keune, D. L., Groves, W. O.

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The Elastic Constants of Gallium Phosphide von Weil, Raoul, Groves, Warren O.

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Electron-hole recombination in nitrogen-doped direct-band-gap GaAs1− x P x von Nelson, R. J., Holonyak, N., Groves, W. O., Keune, D. L.

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Electron-hole recombination in nitrogen-doped direct-band-gap GaAs /1-x/P/x von Nelson, R J, HOLONYAK, N, J R, Groves, W O, Keune, D L

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The luminescent properties of nitrogen doped GaAsP light emitting diodes von Craford, M. G., Keune, D. L., Groves, W. O., Herzog, A. H.

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Development of improved single crystal gallium phosphide solar cells Final report, 15 Aug. 1964 - 15 Aug. 1965 von Epstein, A. S., Groves, W. O.

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Development of improved single crystal gallium phosphide solar cells final report, jun. 12, 1963 - aug. 12, 1964 von Epstein, A. S., Groves, W. O.

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