Designing cryo-enzymatic reactions in subzero liquid water by lipidic mesophase nanoconfinement von Yao, Yang, Zhou, Tao, Färber, Raphael, Grossner, Ulrike, Floudas, George, Mezzenga, Raffaele

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Mapping the impact of defect distributions in silicon carbide devices using the edge transient-current technique von Dorfer, Christian, Bathen, Marianne E., Race, Salvatore, Kumar, Piyush, Tsibizov, Alexander, Woerle, Judith, Grossner, Ulrike

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SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation von Kimoto, Tsunenobu, Kaneko, Mitsuaki, Grossner, Ulrike

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Accurate Calculation of Partial Inductances for the Orthogonal PEEC Formulation von Kovacevic-Badstuebner, Ivana, Romano, Daniele, Lombardi, Luigi, Grossner, Ulrike, Ekman, Jonas, Antonini, Giulio

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Broadband Circuit-Oriented Electromagnetic Modeling for Power Electronics: 3-D PEEC Solver vs. RLCG-Solver von Kovacevic-Badstuebner, Ivana, Romano, Daniele, Antonini, Giulio, Ekman, Jonas, Grossner, Ulrike

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Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs von Kakarla, Bhagyalakshmi, Nida, Selamnesh, Mueting, Johanna, Ziemann, Thomas, Kovacevic-Badstuebner, Ivana, Grossner, Ulrike

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Defect Profiling of Oxide‐Semiconductor Interfaces Using Low‐Energy Muons von Mendes Martins, Maria, Kumar, Piyush, Woerle, Judith, Ni, Xiaojie, Grossner, Ulrike, Prokscha, Thomas

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The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers von Ghezellou, Misagh, Kumar, Piyush, Bathen, Marianne E., Karsthof, Robert, Sveinbjörnsson, Einar Ö., Grossner, Ulrike, Bergman, J. Peder, Vines, Lasse, Ul-Hassan, Jawad

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Lateral Straggling of Ion Implantation Distributions in 4H-SiC Investigated by SIMS von Bobal, Viktor, Müting, Johanna, Svensson, Bengt Gunnar, Azarov, Alexander, Grossner, Ulrike

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Planar to Trench: Short Circuit Capability Analysis of 1.2 kV SiC MOSFETs von Kakarla, Bhagyalakshmi, Ziemann, Thomas, Nida, Selamnesh, Doenni, Elias, Grossner, Ulrike

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Continuous Compact Model of a SiC VDMOSFET Based on Surface Potential Theory von Jäger, Beat, Ju, Yan Rui, Stark, Roger, Grossner, Ulrike

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Surface Morphology of 4H-SiC after Thermal Oxidation von Šimonka, Vito, Selberherr, Siegfried, Weinbub, Josef, Woerle, Judith, Camarda, Massimo, Sigg, Hans, Müller, Elisabeth, Hössinger, Andreas, Grossner, Ulrike

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The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN von Wright, A. F., Grossner, Ulrike

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Analysis of 4H-SiC MOS capacitors on macro-stepped surfaces von Camarda, Massimo, Woerle, Judith, Souliere, Veronique, Ferro, Gabriel, Sigg, Hans, Grossner, Ulrike, Gobrecht, Jens

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(Invited) Requirements for Highly Accurate Multiphysics Modeling of SiC Power MOSFETs and Power Modules von Grossner, Ulrike, Kakarla, Bhagyalakshmi, Ziemann, Thomas, Muting, Johanna, Stark, R., Kovacevic-Badstuebner, Ivana

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Simulation-Based Sensitivity Analysis of Conduction and Switching Losses for Silicon Carbide Power MOSFETs von Müting, Johanna, Grossner, Ulrike

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Anisotropic and Optimized FFT-Based Iterative Electromagnetic Solver for the PEEC Method von Romano, Daniele, Kovacevic-Badstuebner, Ivana, Antonini, Giulio, Grossner, Ulrike

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Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions von Tsibizov, Alexander, Kovacevic-Badstubner, Ivana, Kakarla, Bhagyalakshmi, Grossner, Ulrike

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High-Temperature Impact-Ionization Model for 4H-SiC von Nida, Selamnesh, Grossner, Ulrike

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Accelerated Evaluation of Quasi-Static Interaction Integrals via Cubic Spline Interpolation in the Framework of the PEEC Method von Romano, Daniele, Kovacevic-Badstuebner, Ivana, Antonini, Giulio, Grossner, Ulrike

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