Characterization of carrier behavior in photonically excited 6H silicon carbide exhibiting fast, high voltage, bulk transconductance properties von Sampayan, S. E., Grivickas, P. V., Conway, A. M., Sampayan, K. C., Booker, I., Bora, M., Caporaso, G. J., Grivickas, V., Nguyen, H. T., Redeckas, K., Schoner, A., Voss, L. F., Vengris, M., Wang, L.

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Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing von Grivickas, P., Ščajev, P., Kazuchits, N., Lastovskii, S., Voss, L. F., Conway, A. M., Mazanik, A., Korolik, O., Bikbajevas, V., Grivickas, V.

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Carrier recombination parameters in diamond after surface boron implantation and annealing von Grivickas, P., Ščajev, P., Kazuchits, N., Mazanik, A., Korolik, O., Voss, L. F., Conway, A. M., Hall, D. L., Bora, M., Subačius, L., Bikbajevas, V., Grivickas, V.

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Intrinsic shape of free carrier absorption spectra in 4H-SiC von Grivickas, P., Redeckas, K., Gulbinas, K., Conway, A. M., Voss, L. F., Bora, M., Sampayan, S., Vengris, M., Grivickas, V.

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Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique von Rasool, S.,  Ščajev, P., Saritha, K., Svito, I., Reddy, K. T. Ramakrishna,  Tivanov, M. S., Grivickas, V.

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Crystal stacking: A route to control photoelectrochemical behavior of BiOBr films von Kazyrevich, M.E., Streltsov, E.A., Malashchonak, М.V., Mazanik, A.V., Kulak, A.I., Ščajev, P., Grivickas, V.

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Fundamental band edge absorption in nominally undoped and doped 4H-SiC von Grivickas, P., Grivickas, V., Linnros, J., Galeckas, A.

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Probing of Carrier Recombination in n- and p-Type 6H-SiC Using Ultrafast Supercontinuum Pulses von Grivickas, Paulius, Redeckas, Kipras, Sampayan, Stephen, Vengris, Mikas, Grivickas, Vytautas

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4H-silicon carbide-dielectric interface recombination analysis using free carrier absorption von Suvanam, S. S., Gulbinas, K., Usman, M., Linnarson, M. K., Martin, D. M., Linnros, J., Grivickas, V., Hallén, A.

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Fluorescent SiC as a new material for white LEDs von Syväjärvi, M, Müller, J, Sun, JW, Grivickas, V, Ou, Y, Jokubavicius, V, Hens, P, Kaisr, M, Ariyawong, K, Gulbinas, K, Liljedahl, R, Linnarsson, M K, Kamiyama, S, Wellmann, P, Spiecker, E, Ou, H

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Evidence of non-isentropic release from high residual temperatures in shocked metals measured with ultrafast x-ray diffraction von Yang, Hong, Armstrong, Michael R., Austin, Ryan A., Radousky, Harry B., Patel, Akshat Hetal, Wei, Tiwei, Goncharov, Alexander F., Mao, Wendy L., Granados, Eduardo, Lee, Hae Ja, Nam, Inhyuk, Nagler, Bob, Walter, Peter, Belof, Jonathan L., Brown, Shaughnessy B., Prakapenka, Vitali, Lobanov, Sergey S., Prescher, Clemens, Holtgrewe, Nicolas, Stavrou, Elissaios, Grivickas, Paulius V., Gleason, Arianna E.

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A Total Internal Reflection Photoconductive Switch von Bora, Mihail, Voss, Lars F., Grivickas, Paulius V., Hall, David L., Alameda, Jennifer B., Kramer, Noah J., Torres, Andrea M., Conway, Adam M.

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Extrinsic Absorption Pathways in Vanadium‐Doped SiC Measured Using a Total Internal Reflection Geometry von Kramer, Noah J., Voss, Lars F., Conway, Adam M., Grivickas, Paulius V., Bora, Mihail, Hall, David L., Caruso, Anthony N.

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Conversion of Laser Pulse Optical Energy to Photo-acoustic Wave in nm-Scale Layered TlGaSe2 Crystals von Gulbinas, K, Grivickas, V, Grivickas, P, Linnros, J

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Ultrafast shock compression of PDMS‐based polymers von Armstrong, Michael R., Grivickas, Paulius V., Sawvel, April M., Lewicki, James P., Crowhurst, Jonathan C., Zaug, Joseph M., Radousky, Harry B., Stavrou, Elissaios, Alviso, Cynthia T., Hamilton, Julie, Maxwell, Robert S.

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Auger recombination in 4H-SiC: Unusual temperature behavior von Galeckas, A., Linnros, J., Grivickas, V., Lindefelt, U., Hallin, C.

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A Comparison of Free Carrier Absorption and Capacitance Voltage Methods for Interface Trap Measurements von Gulbinas, K., Hallén, Anders, Grivickas, V., Usman, M., Suvanam, Sethu Saveda

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Fundamental Band Edge Absorption in 3C-SiC: Phonon Absorption Assisted Transitions von Gulbinas, K., Grivickas, Paulius, Manolis, Georgios, Grivickas, Vytautas, Linnros, Jan

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Optical characterization of excess carrier lifetime and surface recombination in 4H/6H–SiC von Galeckas, A., Linnros, J., Frischholz, M., Grivickas, V.

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Excitonic absorption above the Mott transition in Si von Grivickas, P, Grivickas, V, Linnros, J

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