Ag droplets nano-shape design on SiC: Study on wetting and energetics von Censabella, M., Irrera, D., Boscarino, S., Piccitto, G., Grimaldi, M.G., Ruffino, F.

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Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2 von Ruffino, F, Grimaldi, MG, Giannazzo, F, Roccaforte, F, Raineri, V

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Atomic Force Microscopy Study of the Kinetic Roughening in Nanostructured Gold Films on SiO2 von Ruffino, F, Grimaldi, MG, Giannazzo, F, Roccaforte, F, Raineri, V

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Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2 von Ruffino, F, Grimaldi, MG, Giannazzo, F, Roccaforte, F, Raineri, V

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Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2 von Ruffino, F, Bongiorno, C, Giannazzo, F, Roccaforte, F, Raineri, V, Grimaldi, MG

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Room-temperature electroluminescence of ion-beam-synthesized β-FeSi2 precipitates in silicon von Martinelli, Lucio, Grilli, E., Guzzi, M., Grimaldi, M. G.

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Origin and perspectives of the 1.54 μm luminescence from ion-beam-synthesized β-FeSi2 precipitates in Si von Spinella, C., Coffa, S., Bongiorno, C., Pannitteri, S., Grimaldi, M. G.

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Fluorine segregation and incorporation during solid-phase epitaxy of Si von Mirabella, S., Impellizzeri, G., Bruno, E., Romano, L., Grimaldi, M. G., Priolo, F., Napolitani, E., Carnera, A.

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Thermodynamic Properties of Supported and Embedded Metallic Nanocrystals: Gold on/in SiO2 von Ruffino, F, Grimaldi, MG, Giannazzo, F, Roccaforte, F, Raineri, V

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Room-temperature boron displacement in crystalline silicon induced by proton irradiation von Piro, A. M., Romano, L., Mirabella, S., Grimaldi, M. G.

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Lattice location and thermal evolution of small B complexes in crystalline Si von Romano, L., Piro, A. M., Mirabella, S., Grimaldi, M. G., Rimini, E.

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Effect of surrounding environment on atomic structure and equilibrium shape of growing nanocrystals: gold in/on SiO2 von Ruffino, F, Bongiorno, C, Giannazzo, F, Roccaforte, F, Raineri, V, Grimaldi, Mg

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Impurities–Si interstitials interaction in Si doped with B or Ga during ion irradiation von Romano, L, Piro, A M, Grimaldi, M G, Rimini, E

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Boron lattice location in room temperature ion implanted Si crystal von Piro, A.M., Romano, L., Mirabella, S., Grimaldi, M.G.

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Cross section of the interaction between substitutional B and Si self-interstitials generated by ion beams von Piro, A M, Romano, L, Badalà, P, Mirabella, S, Grimaldi, M G, Rimini, E

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Amorphization and defect recombination in ion implanted silicon carbide von Grimaldi, M. G., Calcagno, L., Musumeci, P., Frangis, N., Van Landuyt, J.

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B implanted at room temperature in crystalline Si: B defect formation and dissolution von Romano, L., Piro, A.M., Mirabella, S., Grimaldi, M.G.

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Fluorine incorporation during Si solid phase epitaxy von Impellizzeri, G., Mirabella, S., Romano, L., Napolitani, E., Carnera, A., Grimaldi, M.G., Priolo, F.

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Group III impurities – Si interstitials interaction caused by ion irradiation von Romano, L., Piro, A.M., De Bastiani, R., Grimaldi, M.G., Rimini, E.

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Role of Si self-interstitials on the electrical de-activation of B doped Si von Piro, A.M., Romano, L., Badalà, P., Mirabella, S., Grimaldi, M.G., Rimini, E.

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