Mechanochemical Synthesis of a Precursor for the Formation of a Magnetostrictive Functional Material Galfenol under Sintering Conditions von Grigoreva, T. F., Kiseleva, T. Yu, Kovaleva, S. A., Zholudev, S. I., Vosmerikov, S. V., Devyatkina, E. T., Grigorev, V. D., Lyakhov, N. Z.

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Controlled Synthesis of Polymer Matrices Based on N-Vinyl Succinimide and N-Vinylpyrrolidone for Immobilization of Low Molecular Weight Active Pharmaceutical Ingredients von Gostev, A. I., Sivtsov, E. V., Grigor’ev, D. V., Sitnikova, V. E., Tikhomirov, V. M.

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Excitonic states in diamond in the spectra of optical absorption and luminescence von Tarasenko, V F, Lipatov, E I, Grigor'ev, D V, Genin, D E

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PosDB: An Architecture Overview von Chernishev, G. A., Galaktionov, V. A., Grigorev, V. D., Klyuchikov, E. S., Smirnov, K. K.

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Effect of Pulse Nanosecond Volume Discharge in Air at Atmospheric Pressure on Electrical Properties of Mis Structures Based on p-HgCdTe Grown by Molecular Beam Epitaxy von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Grigor’ev, D. V., Tarasenko, V. F., Shulepov, M. A.

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Applied optical properties of diamond von Lipatov, E. I., Genin, D. E., Grigor’ev, D. V., Tarasenko, V. F., Burachenko, A. G., Baksht, E. Kh, Beloplotov, D. V.

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A mosasaur from the Cenomanian of Russia von Grigor’ev, D. V., Averianov, A. O., Arkhangelsky, M. S., Pervushov, E. M., Zozyrev, N. Yu

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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–x Cd x Te (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Grigor’ev, D. V., Lyapunov, D. V.

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Effect of the Graded-Gap Layer Composition on the Formation of n+–n−–p Structures in Boron-Implanted Heteroepitaxial CdxHg1–xTe Layers von Talipov, N. Kh, Voitsekhovskii, А. V., Grigor’ev, D. V.

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Ge/Si nanoheterostructures with ordered Ge quantum dots for optoelectronic applications von Pchelyakov, O. P., Dvurechenskii, A. V., Nikiforov, A. I., Voitsekhovskii, A. V., Grigor’ev, D. V., Kokhanenko, A. P.

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A change in the electro-physical properties of narrow-band CdHgTe solid solutions acted upon by a volume discharge induced by an avalanche electron beam in the air at atmospheric p... von Voitsekhovskii, A. V., Grigor’ev, D. V., Korotaev, A. G., Kokhanenko, A. P., Tarasenko, V. F., Shulepov, M. A.

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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE von Voitsekhovskii, A. V., Korotaev, A. G., Kokhanenko, A. P., Grigor’ev, D. V., Varavin, V. S., Dvoretskii, S. A., Sidorov, Yu. G., Mikhailov, N. N., Talipov, N. Kh

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Ion implantation into heteroepitaxial Cd x Hg1–x Te grown by molecular-beam epitaxy von Voitsekhovskii, A. V., Grigor’ev, D. V., Talipov, N. Kh

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Electron Concentration in the Near-Surface Graded-Gap Layer of MBE n-Hg1–xCdxTe (x = 0.22–0.40) Determined from the Capacitance Measurements of MIS-Structures von Voitsekhovskii, A. V., Nesmelov, S. N., Dzyadukh, S. M., Grigor’ev, D. V., Lyapunov, D. V.

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Defect profiles in graded band-gap layers of P-HgCdTe heteroepitaxial structures under ion-beam etching von Voitsekhovskii, A. V., Volkov, V. S., Grigor’ev, D. V., Izhnin, I. I., Korotaev, A. G., Kokhanenko, A. P., Posyatsk, M., Sredin, V. G., Talipov, N. Kh

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Inverse problems in the theory of electrostatic energy analyzers. I von Golikov, Yu. K., Utkin, K. G., Grigor’ev, D. V.

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Effect of the Graded-Gap Layer Composition on the Formation of n + –n − –p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1–x Te Layers von Talipov, N. Kh, Voitsekhovskii, А. V., Grigor’ev, D. V.

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Ion implantation into heteroepitaxial CdxHg1–xTe grown by molecular-beam epitaxy von Voitsekhovskii, A. V., Grigor’ev, D. V., Talipov, N. Kh

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Assessment of the possibility of determination of the electrophysical characteristics of Cd x Hg1–x Te p +–n-structures using differential hall measurements von Voitsekhovskii, A. V., Vasil’ev, V. V., Grigor’ev, D. V., Romanov, I. V.

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Assessment of the possibility of determination of the electrophysical characteristics of CdxHg1–xTe p+–n-structures using differential hall measurements von Voitsekhovskii, A. V., Vasil’ev, V. V., Grigor’ev, D. V., Romanov, I. V.

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