Surface- and tip-enhanced resonant Raman scattering from CdSe nanocrystals von Sheremet, E, Milekhin, A. G, Rodriguez, R. D, Weiss, T, Nesterov, M, Rodyakina, E. E, Gordan, O. D, Sveshnikova, L. L, Duda, T. A, Gridchin, V. A, Dzhagan, V. M, Hietschold, M, Zahn, D. R. T

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The low thermal gradient CZ technique as a way of growing of dislocation-free germanium crystals von Moskovskih, V.A., Kasimkin, P.V., Shlegel, V.N., Vasiliev, Y.V., Gridchin, V.A., Podkopaev, O.I.

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Analysis and Simulation of Vertical Complementary Silicon Bipolar Transistors von Hrapov, M. O., Gridchin, V. A., Kalinin, S. V.

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Analyzing the Influence of Temperature on the Electrophysical Characteristics of a Complementary Pair of Vertical Bipolar Transistors von Hrapov, M. O., Gluhov, A. V., Gridchin, V. A., Kalinin, S. V.

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The four-terminal piezotransducer: theory and comparison with piezoresistive bridge von Gridchin, A.V., Gridchin, V.A.

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Piezoresistive properties of polysilicon films von Gridchin, V.A., Lubimsky, V.M., Sarina, M.P.

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A three-terminal silicon piezotransducer: general consideration and estimation of sensitivity von Gridchin, A.V., Gridchin, V.A.

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Polysilicon strain-gauge transducers von Gridchin, V.A., Lubimskyi, V.M., Sarina, M.P.

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The Effect of Current Pulse Annealing on the Electrical Properties of Polycrystalline p-Si von Gridchin, V. A.

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Piezoresistance in the films of p-type polycrystalline silicon von Gridchin, V. A., Lyubimsky, V. M.

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Scattering of Charge Carriers at the Boundaries of Crystallites in Films of Polycrystalline Silicon von Gridchin, V. A.

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Nonlinearity of the Piezoresistive Effect in Polycrystalline Silicon Films von Gridchin, V. A.

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Variband GaAs(1-x)Px : a material for pressure sensors von GRIDCHIN, V. A, PUCKLYAKOV, Y. A, SHURMAN, L. B

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Numerical simulation of multiterminal silicon piezoelements von Gridchin, V.A., Pirogova, R.A.

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Study of the possibility of growing germanium single crystals under low temperature gradients von Moskovskih, V. A., Kasimkin, P. V., Shlegel, V. N., Vasiliev, Y. V., Gridchin, V. A., Podkopaev, O. I., Zhdankov, V. N.

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The use of stressed silicon in MOS transistors and CMOS structures von Neizvestnyi, I. G., Gridchin, V. A.

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Experimental investigation of the Greek cross-shaped piezoresistive element von Gridchin, V.A., Gridchin, A.V., Lubimsky, V.M., Besedin, V.M.

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Comparison of Ritz and finite element method for stress analysis of silicon elastic elements von Gridchin, V.A., Lee, J.H., Gridchin, A.V., Gribov, V.A., Berdinsky, A.S., Shaporin, A.V.

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The influence of the sizes of the cross section of mesapiezoresistors on their characteristics von Gridchin, V. A., Cherkaev, A. S., Chebanov, M. A., Zinov’ev, V. B., Neizvestnyi, I. G., Kamaev, G. N.

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Influence of Photolithography Mistakes on Characteristics of Ftsp Transducer von Gridchin, A.V., Kolchuzhin, V.A., Gridchin, V.A., Suchanek, G., Gerlach, G.

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