Effect of postgrowth processing technology and laser radiation parameters at wavelengths of 2091 and 1064 nm on the laser-induced damage threshold in ZnGeP2 single crystal von Yudin, N N, Antipov, O L, AI Gribenyukov, Eranov, I D, Podzyvalov, S N, Zinoviev, M M, Voronin, LA, Zhuravleva, E V, Zykova, M P

Volltext

Growth and defect structure of ZnGeP sub(2) crystals von Verozubova, G A, Okunev, A O, Gribenyukov, AI, Trofimiv, AYu, Trukhanov, E M, Kolesnikov, A V

Volltext

Synthesis and growth of ZnGeP2 crystals for nonlinear optical applications von Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., Semchinova, O., Uffmann, D.

Volltext

ZnGeP2 growth: melt non-stoichiometry and defect substructure von Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., Vere, A.W., Flynn, C.J.

Volltext

Modelling half-cycle pulse generation in ZnGeP2 crystal von Apollonov, V V, Shakir, Yu A, Gribenyukov, A I

Volltext

ZnGeP2 synthesis and growth from melt von Verozubova, G.A., Gribenyukov, A.I., Korotkova, V.V., Ruzaikin, M.P.

Volltext

High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser von VODOPYANOV, K. L, KULEVSKII, L. A, VOEVODIN, V. G, GRIBENYUKOV, A. I, ALLAKHVERDIEV, K. R, KERIMOV, T. A

Volltext