Independently Accessible Dual-Band Barrier Infrared Detector Using Type-II Superlattices von Seung-man, Park, Grein, Christoph H

Volltext

Determination of the background doping polarity for unintentionally doped AlGaAsSb and AlInAsSb avalanche photodiodes on InP substrates von Schwartz, M., Kodati, S. H., Lee, S., Jung, H., Chen, D., Grein, C. H., Ronningen, T. J., Campbell, J. C., Krishna, S.

Volltext

Low excess noise and high quantum efficiency avalanche photodiodes for beyond 2 µm wavelength detection von Jung, Hyemin, Lee, Seunghyun, Jin, Xiao, Liu, Yifan, Ronningen, Theodore. J., Grein, Christopher. H., David, John. P. R., Krishna, Sanjay

Volltext

Assessing Sb Cross Incorporation in InAs/InAsSb Superlattices von El Khalidi, Zahira, Grein, Christoph H., Ciani, Anthony, Sivananthan, Sivalingam

Volltext

Filtering bleb function after clear cornea phacoemulsification: a prospective study von Klink, J, Schmitz, B, Lieb, W E, Klink, T, Grein, H-J, Sold-Darseff, J, Heinold, A, Grehn, F

Volltext

AlInAsSb avalanche photodiodes on InP substrates von Kodati, S. H., Lee, S., Guo, B., Jones, A. H., Schwartz, M., Winslow, M., Pfiester, N. A., Grein, C. H., Ronningen, T. J., Campbell, J. C., Krishna, S.

Volltext

Low noise Al0.85Ga0.15As0.56Sb0.44 avalanche photodiodes on InP substrates von Lee, S., Kodati, S. H., Guo, B., Jones, A. H., Schwartz, M., Winslow, M., Grein, C. H., Ronningen, T. J., Campbell, J. C., Krishna, S.

Volltext

Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates von Lee, S., Guo, B., Kodati, S. H., Jung, H., Schwartz, M., Jones, A. H., Winslow, M., Grein, C. H., Ronningen, T. J., Campbell, J. C., Krishna, S.

Volltext

Transition levels of intrinsic defects in type-II InAs/InAs0.5Sb0.5 strained-layer superlattices von Miao, Maosheng, Kioussis, Nicholas, Grein, Christoph H.

Volltext

A comparative study of impact ionization and avalanche multiplication in InAs, HgCdTe, and InAlAs/InAsSb superlattice von Tempel, S., Winslow, M., Kodati, S. H., Lee, S., Ronningen, T. J., Krishna, S., Krishnamurthy, S., Grein, C. H.

Volltext

Strained and Unstrained Layer Superlattices for Infrared Detection von Grein, C. H., Garland, J., Flatté, M. E.

Volltext

Microstructure of Heteroepitaxial ZnTe Grown by Molecular Beam Epitaxy on Si(211) Substrates von Wang, X. J., Chang, Y., Becker, C. R., Grein, C. H., Sivananthan, S., Kodama, R.

Volltext

Impact Ionization Coefficients of Digital Alloy and Random Alloy Al0.85Ga0.15As0.56Sb0.44 in a Wide Electric Field Range von Guo, Bingtian, Jin, Xiao, Lee, Seunghyun, Ahmed, Sheikh Z., Jones, Andrew H., Xue, Xingjun, Liang, Baolai, Lewis, Harry I. J., Kodati, Sri H., Chen, Dekang, Ronningen, Theodore J., Grein, Christoph H., Ghosh, Avik W., Krishna, Sanjay, David, John P. R., Campbell, Joe C.

Volltext

MWIR and LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements von Velicu, S., Grein, C.H., Emelie, P.Y., Itsuno, A., Philips, J.D., Wijewarnasuriya, P.

Volltext

Linear Mode Avalanche Photodiodes With Antimonide Multipliers on InP Substrates von Krishna, Sanjay, Lee, Seunghyun, Kodati, Sri Harsha, Schwartz, Mariah, Jung, Hyemin, Ronningen, Theodore J., Guo, Bingtian, Jones, Andrew H., Winslow, Martin, Campbell, Joseph C., Grein, Christoph H.

Volltext

Design and growth of short-period long wavelength infrared InAsSb/InAsSb superlattices on lattice engineered metamorphic buffers von Haugan, H. J., Ciani, A. J., Grein, C. H., Mahalingam, K.

Volltext

Optical constants of Al0.85Ga0.15As0.56Sb0.44 and Al0.79In0.21As0.74Sb0.26 von Guo, B., Jones, A. H., Lee, S., Kodati, S. H., Liang, B., Xue, X., Pfiester, N. A., Schwartz, M., Winslow, M., Grein, C. H., Ronningen, T. J., Krishna, S., Campbell, J. C.

Volltext

A Plausible SAM IR APD with HgCdTe Heterojunctions von Park, Seung-man, Grein, Christoph H.

Volltext

Design of Phosphorus-Containing MWIR Type-II Superlattices for Infrared Photon Detectors von Grein, C. H., Flatte, M. E., Evans, A. J., Hood, A. D., Tennant, W. E., Nathan, V.

Volltext

Engineering of impact ionization characteristics in In0.53Ga0.47As/Al0.48In0.52As superlattice avalanche photodiodes on InP substrate von Lee, S., Winslow, M., Grein, C. H., Kodati, S. H., Jones, A. H., Fink, D. R., Das, P, Hayat, M. M., Ronningen, T. J., Campbell, J. C., Krishna, S.

Volltext