The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs von Green, B.M., Chu, K.K., Chumbes, E.M., Smart, J.A., Shealy, J.R., Eastman, L.F.

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Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers von Skromme, B.J., Sasikumar, A., Green, B.M., Hartin, O.L., Weitzel, C.E., Miller, M.G.

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High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates von Green, B.M., Tilak, V., Lee, S., Kim, H., Smart, J.A., Webb, K.J., Shealy, J.R., Eastman, L.F.

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Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors von Hwang, Jeonghyun, Schaff, William J., Green, Bruce M., Cha, Hoyoung, Eastman, Lester F.

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Diversity performance of dual-antenna handsets near operator tissue von Green, B.M., Jensen, M.A.

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High efficiency monolithic gallium nitride distributed amplifier von Green, B.M., Sungjae Lee, Chu, K., Webb, K.J., Eastman, L.F.

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High-power broadband AlGaN/GaN HEMT MMICs on SiC substrates von Green, B.M., Tilak, V., Sungjae Lee, Hyungtak Kim, Smart, J.A., Webb, K.J., Shealy, J.R., Eastman, L.F.

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Cascode connected AlGaN/GaN HEMTs on SiC substrates von Green, B.M., Chu, K.K., Smart, J.A., Tilak, V., Hyungtak Kim, Shealy, J.R., Eastman, L.F.

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Validation of an analytical large signal model for AlGaN/GaN HEMTs von Green, B.M., Hyungtak Kim, Chu, K.K., Lin, H.S., Tilak, V., Shealy, J.R., Smart, J.A., Eastman, L.F.

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Microwave power limits of AlGaN/GaN HEMTs under pulsed-bias conditions von Green, B.M., Tilak, V., Kaper, V.S., Smart, J.A., Shealy, J.R., Eastman, L.F.

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MISHFET and Schottky device integration von Green, Bruce M, Teplik, James A

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Semiconductor device with selectively etched surface passivation von Green, Bruce M, Hill, Darrell G, Moore, Karen E

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Devices with signal and temperature characteristic dependent control circuitry and methods of operation therefor von Green, Bruce M, Krvavac, Enver, Staudinger, Joseph

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Semiconductor device with a recessed ohmic contact and methods of fabrication von Green, Bruce M, Hill, Darrell G, Moore, Karen E

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Semiconductor device with selectively etched surface passivation von Green, Bruce M, Hill, Darrell G, Moore, Karen E

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DEVICES WITH SIGNAL AND TEMPERATURE CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND METHODS OF OPERATION THEREFOR von Green Bruce M, Krvavac Enver, Staudinger Joseph

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Devices with signal characteristic dependent control circuitry and methods of operation therefor von Green Bruce M, Krvavac Enver, Staudinger Joseph

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DEVICES WITH SIGNAL CHARACTERISTIC DEPENDENT CONTROL CIRCUITRY AND METHODS OF OPERATION THEREFOR von KRVAVAC ENVER, STAUDINGER JOSEPH, GREEN BRUCE M

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Devices with signal characteristic dependent control circuitry and methods of operation therefor von Green Bruce M, Krvavac Enver, Staudinger Joseph

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Dynamic loadline analysis of AlGaN/GaN HEMTs von Green, B.M., Kaper, V.S., Tilak, V., Shealy, J.R., Eastman, L.F.

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