A 3B 5 cleaved surfaces covered by Ag at 10–300K von Grazhulis, V.A.

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On low temperature studies of semiconductor surfaces von Grazhulis, V.A

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Study of the Gd/GaAs(110) system: interface and Schottky barrier formation at low and room temperatures von Chaika, A.N, Grazhulis, V.A, Ionov, A.M, Molodtsov, S.L, Laubschat, C

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Interface and Schottky barrier formation in the Gd/GaAs(110) system von Chaika, A.N., Grazhulis, V.A., Ionov, A.M., Molodtsov, S.L., Laubschat, C.

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Electronic structure of the valence band of GdS x and Gd 3S 4 von Grazhulis, V.A., Bozhko, S.I., Bolotin, I.L., Bulanov, O.R., Ionov, A.M.

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Low-energy loss spectroscopy of compounds of family GdS x ( x = 0.8−1.25) von Grazhulis, V.A., Bolotin, I.L., Bozhko, S.I., Bulanov, O.R., Ionov, A.M.

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Investigation of electronic structures op high-Tc compounds La 1.85Sr 0.15CuO 4,YBa 2Cu 3O 7-X, Bi 2Sr 2CaCu 2O X :leels studies von Grazhulis, V.A., Ionov, A.M.

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Photoemission study of the reactive Dy/GaAs(110) interface von Chaika, A.N., Grazhulis, V.A., Ionov, A.M., Kashkarov, P.K., Molodtsov, S.L., Shikin, A.M., Laubschat, C.

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Low temperature studies of semiconductor surfaces von Grazhulis, V.A.

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New results in low temperature studies of semiconductor surfaces von Grazhulis, V.A.

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Endor of a dislocation center in a deformed silicon von Grazhulis, V.A., Kveder, V.V., Osip'yan, Yu.A., Lee, Y.H., Kleinhenz, R.L., Van Camp, H., Scholes, C.P., Corbett, J.W.

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A3B5 cleaved surfaces covered by Ag at 10–300K von Grazhulis, V.A.

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UPS (8.43 and 21.2eV) data on the evolution of DOS spectra near EF of Bi2Sr2CaCu2O8 under thermal and light treatments von Aprelev, A.M., Grazhulis, V.A., Ionov, A.M., Lisachenko, A.A.

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On magnetism of quantum “dots” and “channels” von Grazhulis, V.A.

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Low-energy loss spectroscopy of compounds of family GdSx (x = 0.8−1.25) von Grazhulis, V.A., Bolotin, I.L., Bozhko, S.I., Bulanov, O.R., Ionov, A.M.

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Electronic structure of the valence band of GdSx and Gd3S4 von Grazhulis, V.A., Bozhko, S.I., Bolotin, I.L., Bulanov, O.R., Ionov, A.M.

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Electron spectroscopy for (001)Bi 2Sr 2Ca n−1Cu nO 2n+4( n = 1, 2); comparative studies von Bolotin, I.L., Grazhulis, V.A., Ionov, A.M., Karabashev, S.G., Shuliatev, D.A.

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UPS (8.43 and 21.2eV) data on the evolution of DOS spectra near E F of Bi 2Sr 2CaCu 2O 8 under thermal and light treatments von Aprelev, A.M., Grazhulis, V.A., Ionov, A.M., Lisachenko, A.A.

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Investigation of electronic structures op high-Tc compounds La1.85Sr0.15CuO4,YBa2Cu3O7-X, Bi2Sr2CaCu2OX :leels studies von Grazhulis, V.A., Ionov, A.M.

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Electron transport in the Si(111)-Cr(√3 × √3)R30°-αSi surface phase and in epitaxial films of CrSi, CrSi2 on Si(111) von Gasparov, V.A., Grazhulis, V.A., Bondarev, V.V., Bychkova, T.M., Lifshits, V.G., Galkin, N.G., Plusnin, N.I.

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