Evidence of reduced self-heating in strained Si MOSFETs von Nicholas, G., Grasby, T.J., Parker, E.H.C., Whall, T.E., Skotnicki, T.

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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SiGe(C) epitaxial technologies—issues and prospectives von Grasby, T.J, Whall, T.E, Parker, E.H.C

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High Mobility Strained Ge pMOSFETs With High- \kappa /Metal Gate von Nicholas, G., Grasby, T.J., Fulgoni, D.J.F., Beer, C.S., Parsons, J., Meuris, M., Heyns, M.M.

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Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates von Parsons, J., Beer, C.S., Leadley, D.R., Capewell, A.D., Grasby, T.J.

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On the electron mobility enhancement in biaxially strained Si MOSFETs von Driussi, F., Esseni, D., Selmi, L., Hellström, P.-E., Malm, G., Ha˚llstedt, J., Östling, M., Grasby, T.J., Leadley, D.R., Mescot, X.

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High mobility strained ge pMOSFETs with high-κ/metal gate von Nicholas, Gareth, Grasby, T.J, Fulgoni, D.J.F, Beer, C.S, Parsons, J, Meuris, M, Heyns, Marc

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High Mobility Strained Ge pMOSFETs With High-[kappa]/Metal Gate von Nicholas, G, Grasby, T.J, Fulgoni, D.J.F, Beer, C.S, Parsons, J, Meuris, M, Heyns, M.M

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Influence of regrowth conditions on the hole mobility in strained Ge heterostructures produced by hybrid epitaxy von Morris, R. J. H., Leadley, D. R., Hammond, R., Grasby, T. J., Whall, T. E., Parker, E. H. C.

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Impact ionisation in strained SiGe pMOSFETs von NICHOLAS, G, DOBBIE, A, GRASBY, T. J, WHALL, T. E, PARKER, E. H. C

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs von PREST, M. J, PALMER, M. J, ASENOV, A, BARKER, J. R, GRASBY, T. J, PHILLIPS, P. J, MIRONOV, O. A, PARKER, E. H. C, WHALL, T. E, WAITE, A. M, EVANS, A. G. R, WATLING, J. R

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Transconductance, carrier mobility and 1/ f noise in Si/Si 0.64Ge 0.36/Si pMOSFETs von Prest, M.J, Palmer, M.J, Grasby, T.J, Phillips, P.J, Mironov, O.A, Parker, E.H.C, Whall, T.E, Waite, A.M, Evans, A.G.R, Watling, J.R, Asenov, A, Barker, J.R

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Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise von Prest, M.J., Palmer, M.J., Braithwaite, G., Grasby, T.J., Phillips, P.J., Mironov, O.A., Parker, E.H.C., Whall, T.E., Waite, A.M., Evans, A.G.R.

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