Electron velocity overshoot in a GaAs-based p - i - n nanostructure semiconductor observed by transient subpicosecond Raman spectroscopy von Grann, E. D., Tsen, K. T., Sankey, O. F., Ferry, D. K., Salvador, A., Botcharev, A., Morkoç, H.

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Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p - i - n nanostructure semiconductors von Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, Selim E., Ferry, D. K., Maracas, G., Droopad, Ravi, Salvador, A., Botcharev, A., Morkoç, H.

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Nonequilibrium phonon dynamics and electron distribution functions in InP and InAs von Grann, ED, Tsen, KT, Ferry, DK

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Electron velocity overshoot and nonequilibrium phonons in a GaAs-based p-i-n nanostructure studied by transient subpicosecond Raman spectroscopy von Grann, ED, Tsen, KT, Ferry, DK, Salvador, A, Botcharev, A, Morkoc, H

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Transient picosecond Raman studies of high-field electron transport in GaAs-based p-i-n nanostructure semiconductors von Grann, ED, Sheih, SJ, Tsen, KT, Sankey, OF, Günçer, SE, Ferry, DK, Salvador, A, Botcharev, A, Morkoc, H

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Field-induced electron transport and phonon dynamics in a GaAs-based p - i - n nanostructure: A subpicosecond time-resolved Raman probe von Grann, E. D., Tsen, K. T., Ferry, D. K., Salvador, A., Botcharev, A., Morkoc, H.

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Simulation of Raman scattering from nonequilibrium phonons in InP and InAs von Ferry, D.K., Grann, E.D., Tsen, K.T.

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