Vertical alignment of laterally ordered InAs and InGaAs quantum dot arrays on patterned (0 0 1) GaAs substrates von Nakamura, Y, Schmidt, O.G, Jin-Phillipp, N.Y, Kiravittaya, S, Müller, C, Eberl, K, Gräbeldinger, H, Schweizer, H

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Long-range ordered lines of self-assembled Ge islands on a flat Si (001) surface von Schmidt, O. G., Jin-Phillipp, N. Y., Lange, C., Denker, U., Eberl, K., Schreiner, R., Gräbeldinger, H., Schweizer, H.

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Investigations of growth of self-assembled GaInN–GaN islands on SiC substrate by metalorganic vapor phase epitaxy von Kobayashi, Yasuyuki, Perez-Solorzano, V, Off, J, Kuhn, B, Gräbeldinger, H, Schweizer, Heinz, Scholz, Ferdinand

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Short-channel effects in AlGAN/GaN HEMTs von Breitschädel, O, Kley, L, Gräbeldinger, H, Hsieh, J.T, Kuhn, B, Scholz, F, Schweizer, H

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Selective growth of GaInN quantum dot structures von Perez-Solorzano, V., Ubl, M., Gräbeldinger, H., Gröning, A., Schweizer, H., Jetter, M.

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Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors von Schmidt, O.G, Denker, U, Dashiell, M, Jin-Phillipp, N.Y, Eberl, K, Schreiner, R, Gräbeldinger, H, Schweizer, H, Christiansen, S, Ernst, F

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Longitudinal capacitance design for optical left-handed metamaterials von Schweizer, H., Fu, L., Gräbeldinger, H., Guo, H., Liu, N., Kaiser, S., Giessen, H.

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InGaN/GaN multi-quantum well distributed Bragg reflector laser diode with second-order gratings von Dumitru, V., Schweizer, H., Gräbeldinger, H., Härle, R., Bader, S., Brürderl, G., Weimar, A., Lell, A., Härle, V.

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Self-assembled semiconductor nanostructures: climbing up the ladder of order von Schmidt, O.G., Kiravittaya, S., Nakamura, Y., Heidemeyer, H., Songmuang, R., Müller, C., Jin-Phillipp, N.Y., Eberl, K., Wawra, H., Christiansen, S., Gräbeldinger, H., Schweizer, H.

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Realization of optically pumped second-order GaInN-distributed-feedback lasers von Hofmann, R., Gauggel, H.-P., Griesinger, U. A., Gräbeldinger, H., Adler, F., Ernst, P., Bolay, H., Härle, V., Scholz, F., Schweizer, H., Pilkuhn, M. H.

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Carrier dynamics in site-controlled Ga1-xInxN quantum dots von Jetter, M., Pérez-Solórzano, V., Gröning, A., Gräbeldinger, H., Ubl, M., Schweizer, H.

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Carrier dynamics in site‐controlled Ga 1–x In x N quantum dots von Jetter, M., Pérez‐Solórzano, V., Gröning, A., Gräbeldinger, H., Ubl, M., Schweizer, H.

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Laterally gain-coupled 1.57 µm DFB laserswith chromium surface grating and self-aligned Ti/Pt/Au ohmic contact von Schreiner, R., Körbl, M., Gräbeldinger, H., Gentner, J.L., Schweizer, H.

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Laterally gain-coupled 1.57 mu m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact von Schreiner, R, Koerbl, M, Graebeldinger, H, Gentner, J L, Schweizer, H

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Study of as deposited metal contacts for n-SiC von Jetter, M., Ivanov, A., Härle, R., Gräbeldinger, H., Schweizer, H.

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InGaN/GaN multi-quantum well distributed Bragg reflector laser diode with second-order gratings von Dumitru, V, Schweizer, H, Gräbeldinger, H, Härle, R, Bader, S, Brürderl, G, Weimar, A, Lell, A, Härle, V

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Fabrication of nanometer-structures for photonic devices based on the negative tone resist AZPN114 von Kaden, C., Gräbeldinger, H., Gauggel, H.-P., Hofsäβ, V., Hase, A., Menschig, A., Schweizer, H., Zengerle, R., Brückner, H.J.

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Laterally gain-coupled 1.57µm DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact von Schreiner, R, Körbl, M, Gräbeldinger, H, Gentner, J L, Schweizer, H

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Laterally Coupled InGaN/GaN DFB Laser Diodes von Schweizer, H., Gräbeldinger, H., Dumitru, V., Jetter, M., Bader, S., Brüderl, G., Weimar, A., Lell, A., Härle, V.

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The evolving value assessment of cancer therapies: Results from a modified Delphi study von Lee, M, Larose, H, Gräbeldinger, M, Williams, J, Baird, A.-M, Brown, S, Bruns, J, Clark, R, Cortes, J, Curigliano, G, Ferris, A, Garrison, L.P, Gupta, Y.K, Kanesvaran, R, Lyman, G, Pani, L, Pemberton-Whiteley, Z, Salmonson, T, Sawicki, P, Stein, B, Suh, D.-C, Velikova, G, Grueger, J

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