Reduction of fixed loss in buried-channel CCD's operating at 77 K von Bendapudi, S., Jha, M., Govindacharyulu, P.A., Zarabi, M.J.

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Electronic conductivity of AgI using D.C. polarization and charge transfer techniques von Mazumdar, D., Govindacharyulu, P.A., Bose, D.N.

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Large grain polycrystalline silicon from rice husk von Bose, D.N., Govindacharyulu, P.A., Banerjee, H.D.

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Substrate bias dependence of short-channel MOSFET threshold voltage-a novel approach von Roychaudhuri, A., Jha, M., Sharma, S.K., Govindacharyulu, P.A., Zarabi, M.J.

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Ionic conductivity and dielectric measurements in single crystal β-AgI von Govindacharyulu, P.A., Suri, S.K., Bose, D.N.

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Design of a comprehensive process evaluation vehicle for development of small geometry CMOS process von Bandyopadhyay, A., Govindacharyulu, P.A., Zarabi, M.J.

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A micropower analog hearing aid on low voltage CMOS digital process von Bhattacharyya, A.B., Rana, R.S., Guha, S.K., Bahl, R., Anand, R., Zarabi, M.J., Govindacharyulu, P.A., Gupta, U., Mohan, V., Roy, J., Atri, A.

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Ionic conductivity and dielectric measurements in single crystal βAgI von Govindacharyulu, P.A., Bose, D.N., Suri, S.K.

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Electrical and optical properties of amorphous semiconducting GeSe and GeSbSe films von Katti, V.R., Govindacharyulu, P.A., Bose, D.N.

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