Effects of Ionizing Radiation on Digital Single Event Transients in a 180-nm Fully Depleted SOI Process von Gouker, P.M., Gadlage, M.J., McMorrow, D., McMarr, P., Hughes, H., Wyatt, P., Keast, C., Bhuva, B.L., Narasimham, B.

Volltext

Three-dimensional integration of silicon-on-insulator RF amplifier von CHEN, C. L, CHEN, C. K, KEAST, C. L, YOST, D.-R, KNECHT, J. M, WYATT, P. W, BURNS, J. A, WARNER, K, GOUKER, P. M, HEALEY, P, WHEELER, B

Volltext

Enhanced resolution for future fabrication von Fritze, M., Keast, C.L., Chen, C.K., Astolfi, D.K., Yost, D.R., Burns, J.A., Chang-Lee Chen, Gouker, P.M., Suntharalingam, V., Wyatt, P.W.

Volltext

Channel engineering of SOI MOSFETs for RF applications von Chen, C.L., Knecht, J.M., Kedzierski, J., Chen, C.K., Gouker, P.M., Yost, D.-R., Healey, P., Wyatt, P.W., Keast, C.L.

Volltext

Radiation effects in MIT Lincoln lab 3DIC technology von Gouker, P.M., Wyatt, P.W., Yost, D.-R., Chen, C.K., Knecht, J.M., Chen, C.L., Keast, C.L.

Volltext

Fully Depleted SOI RF Switch with Dynamic Biasing von Chen, C.L., Chen, C.K., Wyatt, P.W., Knecht, J.M., Yost, D.-R., Gouker, P.M., Healey, P.D., Keast, C.L.

Volltext

SLOTFET fabrication of self-aligned sub-100-nm fully-depleted SOI CMOS von Chen, C.K., Chen, C.L., Gouker, P.M., Wyatt, P.W., Yost, D.R., Burns, J.A., Suntharalingam, V., Fritze, M., Keast, C.L.

Volltext

Wafer-Scale 3D Integration of Silicon-on-Insulator RF Amplifiers von Chen, C.L., Chen, C.K., Yost, D.-R., Knecht, J.M., Wyatt, P.W., Burns, J.A., Warner, K., Gouker, P.M., Healey, P., Wheeler, B., Keast, C.L.

Volltext bestellen

Effects of Through-BOX Vias on SOI MOSFETs von Chen, C.L., Chen, C.K., Wyatt, P.W., Gouker, P.M., Burns, J.A., Knecht, J.M., Yost, D.-R., Healey, P., Keast, C.L.

Volltext