Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Kim, Jun Gyu, Raghothamachar, Balaji, Dudley, Michael, Chung, Gill, Sanchez, Edward, Manning, Ian

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Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Wang, H, Wu, F, Raghothamachar, Balaji, Dudley, Michael, Chung, G, Quast, J, Sanchez, E, Manning, I, Hansen, Darren

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(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method von Guo, Jianqiu, Yang, Yu, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael

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(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography von Goue, Ouloide Yannick, Guo, Jianqiu, Yang, Yu, Raghothamachar, Balaji, Dudley, Michael

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Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael

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Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael, Chung, G, Sanchez, E, Maning, I

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(Invited) Structural Characterization of SiC Crystals Grown By Solvent Laser Heated Floating Zone Method and Hot Wall Chemical Vapor Deposition for the Development of a Low Defect... von Raghothamachar, Balaji, Goue, Ouloide Yannick, Dudley, Michael

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(Invited) Study on the Role of Thermal Stress on Prismatic Slip of Dislocations in 4H-SiC Crystals Grown by PVT Method von Guo, Jianqiu, Yang, Yu, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael

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(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography von Goue, Ouloide Yannick, Guo, Jianqiu, Yang, Yu, Raghothamachar, Balaji, Dudley, Michael

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Investigation of Penetration Depth and Defect Image Contrast Formation in Grazing Incidence X-ray Topography of 4H-SiC Wafers von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael, Chung, G, Sanchez, E, Maning, I

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Study on the Relaxation Process in 4H-SiC Homoepitaxy Growth von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael

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Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method von Guo, Jianqiu, Yang, Yu, Wu, Fangzhen, Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael

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Assessment of Factors Controlling the X-ray Penetration Depth in Studies of 4H-SiC using Monochromatic and White Beam Synchrotron X-ray Topography in Reflection Geometry von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Wu, Fangzhen, Raghothamachar, Balaji, Dudley, Michael

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Characterization of CdZnTe Single Crystals Grown Under Different Cadmium Overpressures von Su, Ching-Hua, Goue, Ouloide Yannick, Raghothomachar, Balaji, Dudley, Michael

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Double Shockley Stacking Fault Formation in Higher Doping Regions of PVT-Grown 4H-SiC Wafers von Yang, Yu, Guo, Jianqiu, Goue, Ouloide Yannick, Wang, H, Wu, F, Raghothamachar, Balaji, Dudley, Michael, Chung, G, Quast, J, Sanchez, E, Manning, I, Hansen, Darren

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Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy von Goue, Ouloide Yannick, Raghothamachar, Balaji, Dudley, Michael, Trunek, Andrew J., Neudeck, Philip G., Woodworth, Andrew A., Spry, David J.

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